Výsledky vyhledávání - "Audrey Morisset"

Akademický článek

Passivating contact-based tunnel junction Si solar cells using machine learning for tandem cell applications

Autor: HyunJung Park, Audrey Morisset, Munho Kim, Hae-Seok Lee, Aïcha Hessler-Wyser, Franz-Josef Haug, Christophe Ballif

Publikováno v: Energy and AI, Vol 14, Iss , Pp 100299- (2023)

Tandem solar cells are a key technology for exceeding the theoretical efficiency limit of single-junction cells. One of the most promising combinations is the silicon–perovskite tandem cells, considering their potential for high efficiency, fabrica

Externí odkaz: https://doaj.org/article/12b52f6943d64837830a22d504e24938

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Polysilicon-based tunnel junction Si solar cells with machine learning for tandem cell applications

Autor: HyunJung Park, Audrey Morisset, Munho Kim, Hae-Seok Lee, Aïcha Hessler-Wyser, F-J Haug, Christophe Ballif

Tandem solar cells are a key technology to exceed the theoretical efficiency limit of single-junction cells. One of the most promising combinations is the silicon-perovskite tandem cells, considering their potential for high efficiency, large-area fa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4e25691753a20f2e1311bd4cfd4e801
https://doi.org/10.22541/au.168120010.09652881/v1

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SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells

Autor: Shona McNab, Xinya Niu, Edris Khorani, Ailish Wratten, Audrey Morisset, Nicholas E. Grant, John D. Murphy, Pietro P. Altermatt, Matthew Wright, Peter R. Wilshaw, Ruy S. Bonilla

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87b91c611e210c0ddaaf771153f8c26f
https://ora.ox.ac.uk/objects/uuid:be849e6c-9ccc-4de2-83d3-5ef4b99b0ea0

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Fireable passivating tunnel oxide contacts for crystalline silicon solar cell

Autor: Franz-Josef Haug, Mario Lehmann, Sofia Libraro, Ezgi Genc, Audrey Morisset, Christophe Ballif

Publikováno v: 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85f87e212c410d599b33b329eefb6317
https://doi.org/10.1109/pvsc48317.2022.9938557

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Integration of poly-Si/SiOx contacts in silicon solar cells : Optimization and understanding of conduction and passivation properties

Autor: Audrey Morisset

Publikováno v: Chemical Physics [physics.chem-ph]. Université Paris Saclay (COmUE), 2019. English. ⟨NNT : 2019SACLS443⟩
Audrey Morisset

In the context of high efficiency solar cells (SCs) based on crystalline silicon (c-Si), the development of "passivating" contact structures to limit the recombination of charge carriers at the interface between the metal electrode and the c-Si has b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::51521d20608307288906825338aae00a
https://tel.archives-ouvertes.fr/tel-03506213/document

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Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cells

Autor: Amal Chabli, Eric De Vito, Valentin Giglia, Raphaël Cabal, Sébastien Dubois, Adrien Boulineau, Audrey Morisset, Jean-Paul Kleider, José Alvarez

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2021, 221, pp.110899. ⟨10.1016/j.solmat.2020.110899⟩
Solar Energy Materials and Solar Cells, 2021, 221, pp.110899. ⟨10.1016/j.solmat.2020.110899⟩

International audience; Passivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a poly-crystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) is currently sparking interest for reducing carrier recombination at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fda87cd18d952db410761359fa80eb2
https://hal.archives-ouvertes.fr/hal-03288976

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Electrical scanning probe microscopy approaches to investigate solar cell junctions and devices

Autor: Jean-Paul Kleider, Letian Dai, Clément Marchat, Raphaël Cabal, Pere Roca I. Cabarrocas, Audrey Morisset, José Alvarez

Publikováno v: SPIE Photonics West
SPIE Photonics West, Feb 2020, San Francisco, United States. ⟨10.1117/12.2540422⟩

International audience; C-AFM and KPFM techniques have been applied to investigate advanced junctions that are currently involved in highly efficient silicon solar cells. Our first study focuses on silicon heterojunctions and notably hydrogenated amo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb6e424eca5573cfc52260faa8f272d4
https://hal.archives-ouvertes.fr/hal-02946572/file/ProcSPIE11288-32_v5-ref24.pdf

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Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Autor: Nathalie Valle, Andrea Ingenito, Audrey Morisset, Quentin Jeangros, Philippe Wyss, Christophe Ballif, Aïcha Hessler-Wyser, Santhana Eswara, Franz-Josef Haug, C.N. Shyam Kumar, Mario Lehmann

Publikováno v: physica status solidi (RRL) – Rapid Research Letters. 15:2100272

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a249b9de13609f5e36bba5d6c81aad2e
https://doi.org/10.1002/pssr.202100272

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Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration

Autor: Sébastien Dubois, Quentin Rafhay, Thibaut Desrues, Audrey Morisset, Antoine Veau, Laurent Roux, Anne Kaminski-Cachopo, Frank Torregrosa

Publikováno v: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15)

We report on the relevance of using Plasma Immersion Ion Implantation (PIII) technology for a simple and controlled Phosphorus doping process of polysilicon-based passivated contacts in high efficiency silicon solar cells. Three different ion doses w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa3b26a34fb92f986971686d55261258
https://doi.org/10.1063/1.5123848

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Study of non fire-through metallization processes of boron-doped polysilicon passivated contacts for high efficiency silicon solar cells

Autor: Sébastien Dubois, Benoit Martel, Maxim Hayes, Audrey Morisset, Olivier Palais

Publikováno v: 15th International Conference on Concentrator Photovoltaic Systems (CPV-15)
15th International Conference on Concentrator Photovoltaic Systems (CPV-15), 2019, Fes, France. pp.040006, ⟨10.1063/1.5123833⟩

We report on the investigation of a variety of metallization processes for hole selective passivating contacts, which consist in the combination of an ultra-thin silicon oxide (SiOx) interfacial film (grown by wet treatments) and a 25 nm thick boron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aebbaedc406235b72d36c72140e05109
https://doi.org/10.1063/1.5123833

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