Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Audrey Pinchart"'
Publikováno v:
Surface and Coatings Technology. 201:9120-9124
Novel tungsten precursors, WH2(iPrCp)2 and WH2(EtCp)2, with attractive thermal properties are introduced for Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) of tungsten containing films. Their thermal behavior has be
Autor:
Nicolas Blasco, Christophe Lachaud, Virginie Brizé, Stéphane Daniele, Audrey Pinchart, Catherine Dubourdieu, Mohamad Eleter
Publikováno v:
ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.151-158. ⟨10.1149/1.3207586⟩
ECS Transactions, Electrochemical Society, Inc., 2009, 25 (8), pp.151-158. ⟨10.1149/1.3207586⟩
International audience; The identification of appropriate ligand-metal combinations, which successfully present the features of : (i) having acceptable melting point, (ii) being more thermally stable than hafnium alkylamides, (iii) having sufficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd31d2d205922b4c5b040ee3c23b92af
https://hal.archives-ouvertes.fr/hal-01067593
https://hal.archives-ouvertes.fr/hal-01067593
Autor:
Audrey Pinchart, Nicolas Blasco, Christophe Lachaud, Anthony Schleisman, Christian Dussarrat, Ikuo Suzuki, K. Yanagita
Publikováno v:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Atomic Layer Deposition (ALD) of Hf and Zr oxide films is of considerable interest and promise for future generation Metal-lnsulator-Metal (MIM) structures in memory applications. Hafnium and zirconium alkylamides such as tetrakis(ethylmethylamino) h
Autor:
Mohamad Eleter, Stephane Daniele, Virginie Brize, Catherine Dubourdieu, Christophe Lachaud, Nicolas Blasco, Audrey Pinchart
Publikováno v:
ECS Meeting Abstracts. :2481-2481
not Available.
Autor:
Mikko Ritala, Maarit Kariniemi, Nicolas Blasco, Jaakko Niinistö, Christophe Lachaud, Audrey Pinchart, Markku Leskelä, Nadia Laaroussi, Kaupo Kukli, Christian Dussarrat, Ziyun Wang
Publikováno v:
Journal of Materials Chemistry. 18:5243
Mixed alkylamido-cyclopentadienyl compounds of zirconium, (RCp)Zr(NMe2)3 (R = H, Me or Et) are introduced as precursors for atomic layer deposition (ALD) of high permittivity zirconium oxide thin films. Ozone was used as the oxygen source. Only sligh
Autor:
Jaakko Niinistö, Kaupo Kukli, Maarit Kariniemi, Mikko Ritala, Markku Leskelä, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud, Nadia Laaroussi, Ziyun Wang, Christian Dussarrat
Publikováno v:
Journal of Materials Chemistry; Oct2008, Vol. 18 Issue 43, p5243-5247, 5p