Atom probe tomography for advanced nanoelectronic devices: Current status and perspectives

Autor: Barnes, J.P., Grenier, A., Mouton, I., Barraud, S., Audoit, G., Bogdanowicz, J., Fleischmann, C., Melkonyan, D., Vandervorst, W., Duguay, S., Rolland, N., Vurpillot, F., Blavette, D.

Publikováno v: In Scripta Materialia 15 April 2018 148:91-97

Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3

Autor: Azzaz, M., Benoist, A., Vianello, E., Garbin, D., Jalaguier, E., Cagli, C., Charpin, C., Bernasconi, S., Jeannot, S., Dewolf, T., Audoit, G., Guedj, C., Denorme, S., Candelier, P., Fenouillet-Beranger, C., Perniola, L.

Publikováno v: In Solid State Electronics November 2016 125:182-188

Comparative experimental study of junctionless and inversion mode nanowire transistors for analog applications

Autor: Bosch, Daphnée, Colinge, J.P., Lugo, J., Tataridou, A., Theodorou, Christoforos, Garros, Xavier, Barraud, Sylvain, Lacord, Joris, Sklenard, Benoit, Cassé, Mikaël, Brunet, L., Batude, Perrine, Fenouillet-Beranger, Claire, Lattard, D., Cluzel, J., Allain, F., Nait Youcef, R., Hartmann, J.M., Vizioz, C., Audoit, G., Balestra, Francis, Andrieux, François

Publikováno v: 2020 VLSI-TSA and VLSI-DAT
2020 VLSI-TSA and VLSI-DAT, Aug 2020, Hsinchu, Taiwan

International audience; We fabricated junctionless and inversion-mode monocrystalline nanowire nMOSFETs down to L=18nm gate length and W=20nm width. We demonstrate record performance of nanowire junctionless transistors for analog applications: AVT=1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::72ee0e146edeae6411a7fa3261fb66f8
https://hal.archives-ouvertes.fr/hal-02998458/document

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Chemical depth profiling and 3D reconstruction of III-V heterostructures selectively grown on non-planar Si substrates by MOCVD

Autor: Gorbenko, V., Veillerot, M., Grenier, A., Audoit, G., Hourani, W., Martinez, E., Cipro, R., Martin, M., David, S., Bao, X., Bassani, F., Baron, T., Barnes, J.-P.

Publikováno v: physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, 2015, 9 (3), pp.202-205. ⟨10.1002/pssr.201409544⟩
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2015, 9 (3), pp.202-205. ⟨10.1002/pssr.201409544⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1ffe7d9444434857445226c18f28894d
https://hal.univ-grenoble-alpes.fr/hal-01991901