Zobrazeno 1 - 10
of 1 133
pro vyhledávání: '"Aubin H"'
p-d hybridization of transition metal impurities in a semiconductor host is the mechanism that couples valence-band electrons and localized spins. We use scanning tunneling microscopy and spectroscopy combined with density functional theory to probe
Externí odkaz:
http://arxiv.org/abs/2205.08400
Autor:
Stolyarov, V. S., Remizov, S. V., Shapiro, D. S., Pons, S., Vlaic, S., Aubin, H., Baranov, D. S., Brun, Ch., Yashina, L. V., Bozhko, S. I., Cren, T., Pogosov, W. V., Roditchev, D.
Publikováno v:
Appl. Phys. Lett. 111, 251601 (2017)
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging
Externí odkaz:
http://arxiv.org/abs/1712.00915
Autor:
Wang, H., Lhuillier, E., Yu, Q., Mottaghizadeh, A., Ulysse, C., Zimmers, A., Descamps-Mandine, A., Dubertret, B., Aubin, H.
Publikováno v:
Phys. Rev. B 92, 041403 (2015)
We present a tunnel spectroscopy study of single PbS Quantum Dots (QDs) as function of temperature and gate voltage. Three distinct signatures of strong electron-phonon coupling are observed in the Electron Tunneling Spectrum (ETS) of these QDs. In t
Externí odkaz:
http://arxiv.org/abs/1509.02867
Autor:
Yu, Q., Mottaghizadeh, A., Wang, H., Ulysse, C., Zimmers, A., Rebuttini, V., Pinna, N., Aubin, H.
Publikováno v:
Phys. Rev. B 90, 075122 (2014)
We present a tunnel spectroscopy study of the electronic spectrum of single magnetite \chemform{Fe_3O_4} nanoparticles trapped between nanometer-spaced electrodes. The Verwey transition is clearly identified in the current voltage-characteristics whe
Externí odkaz:
http://arxiv.org/abs/1410.5214
Meeting held July 2010 in Montreal, Canada.
Autor:
Dupont, P., Aubin, H-J.
Publikováno v:
In Revue des Maladies Respiratoires September 2019 36(7):752-800
Publikováno v:
Phys. Rev. B 84, 241410(R) (2011)
We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state
Externí odkaz:
http://arxiv.org/abs/1201.1459
Autor:
Moreira, H., Yu, Q., Nadal, B., Bresson, B., Rosticher, M., Lequeux, N., Zimmers, A., Aubin, H.
Publikováno v:
Phys. Rev. Lett. 107, 176803 (2011)
We describe current-voltage characteristics I(V) of alkyl-ligated gold nanocrystals $\sim 5 nm$ arrays in long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the na
Externí odkaz:
http://arxiv.org/abs/1110.4303
In amorphous superconducting thin films of $Nb_{0.15}Si_{0.85}$ and $InO_x$, a finite Nernst coefficient can be detected in a wide range of temperature and magnetic field. Due to the negligible contribution of normal quasi-particles, superconducting
Externí odkaz:
http://arxiv.org/abs/0902.2732
Autor:
Marrache-Kikuchi, C. A., Aubin, H., Pourret, A., Behnia, K., Lesueur, J., Berge, L., Dumoulin, L.
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents
Externí odkaz:
http://arxiv.org/abs/0810.2321