Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Atushi Koizumi"'
Autor:
Sampei KEMMOCHI, Atushi KOIZUMI
Publikováno v:
Japanese Journal of JSCE. 79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a03b16cd9d774547460712f0af19491
https://doi.org/10.2208/jscejj.f5-0093
https://doi.org/10.2208/jscejj.f5-0093
Publikováno v:
Journal of Crystal Growth. 370:197-199
The strained-layer-superlattice (SLS) consisting of undoped InAs and carbon-doped GaAs (GaAs:C) layers were successfully grown on InP substrates by LP-MOVPE. The grown superlattice shows the p-type conductivity with a hole concentration of 1×10 19 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bb562588be6cc8e2184e3f140595d99
https://doi.org/10.1016/j.jcrysgro.2012.07.022
https://doi.org/10.1016/j.jcrysgro.2012.07.022
Publikováno v:
Proceedings of the Institution of Civil Engineers: Municipal Engineer; Mar2008, Vol. 161 Issue 1, p3-10, 8p, 2 Charts, 7 Graphs
Autor:
Hirotomo Murakami, Atushi Koizumi
Publikováno v:
Proceedings of the Japan Society of Civil Engineers. 1978:103-115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fdab3e128065bef11e4b9b80b518b30
https://doi.org/10.2208/jscej1969.1978.272_103
https://doi.org/10.2208/jscej1969.1978.272_103