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Autor:
Brian Pai, Jen-Lang Lue, Tings Wang, Hsuen-Cheng Liao, Sam Fan, Chin-Shun Lin, Hsien-Wen Liu, Atup Chiou
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper discusses the failure analysis process of a DC failure using an in-FIB (Focused Ion Beam) nanoprobing technique with four probes and a scanning capacitance microscope (SCM) in advanced DRAM devices. Current-Voltage (I-V) curves measured by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d661c01b797abd3f9d0d7781f6469dfb
https://doi.org/10.31399/asm.cp.istfa2007p0219
https://doi.org/10.31399/asm.cp.istfa2007p0219
