Zobrazeno 1 - 10
of 220
pro vyhledávání: '"Attiaoui, A."'
Autor:
Hanjri, Mohammed El, Reguieg, Hamza, Attiaoui, Adil, Abouaomar, Amine, Kobbane, Abdellatif, Kamili, Mohamed El
In the era of the Internet of Things (IoT), decentralized paradigms for machine learning are gaining prominence. In this paper, we introduce a federated learning model that capitalizes on the Euclidean distance between device model weights to assess
Externí odkaz:
http://arxiv.org/abs/2401.12356
Autor:
Atalla, Mahmoud R. M., Assali, Simone, Daligou, Gérard, Attiaoui, Anis, Koelling, Sebastian, Daoust, Patrick, Moutanabbir, Oussama
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. To address this longstanding chall
Externí odkaz:
http://arxiv.org/abs/2310.00225
Autor:
Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G., Daoust, P., Del Vecchio, P., Koelling, S., Luo, L., Rotaru, N.
The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement long coherence quantum processors. However, recent studies demonstrate
Externí odkaz:
http://arxiv.org/abs/2306.04052
Autor:
Daligou, Gérard, Soref, Richard, Attiaoui, Anis, Hossain, Jaker, Atalla, Mahmoud R. M., Del Vecchio, Patrick, Moutanabbir, Oussama
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologie
Externí odkaz:
http://arxiv.org/abs/2302.10742
Ge$_{1-x}$Sn$_x$ semiconductors hold the premise for large-scale, monolithic mid-infrared photonics and optoelectronics. However, despite the successful demonstration of several Ge$_{1-x}$Sn$_x$-based photodetectors and emitters, key fundamental prop
Externí odkaz:
http://arxiv.org/abs/2302.02467
Autor:
Attiaoui, Anis, Daligou, Gérard, Assali, Simone, Skibitzki, Oliver, Schroeder, Thomas, Moutanabbir, Oussama
The short-wave infrared (SWIR) is an underexploited portion of the electromagnetic spectrum in metasurface-based nanophotonics despite its strategic importance in sensing and imaging applications. This is mainly attributed to the lack of material sys
Externí odkaz:
http://arxiv.org/abs/2212.00758
Autor:
Assali, Simone, Koelling, Sebastian, Abboud, Zeinab, Nicolas, Jérôme, Attiaoui, Anis, Moutanabbir, Oussama
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth o
Externí odkaz:
http://arxiv.org/abs/2205.07980
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carriers in heterostructures in the presence of finite interfacial broadeni
Externí odkaz:
http://arxiv.org/abs/2203.14419
Autor:
Atalla, Mahmoud R. M., Assali, Simone, Koelling, Sebastian, Attiaoui, Anis, Moutanabbir, Oussama
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs have been the
Externí odkaz:
http://arxiv.org/abs/2203.03409
Autor:
Assali, Simone, Attiaoui, Anis, Del Vecchio, Patrick, Mukherjee, Samik, Nicolas, Jérôme, Moutanabbir, Oussama
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to the lack of scalable materials to properly tailor the valence band chara
Externí odkaz:
http://arxiv.org/abs/2112.15185