Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Atsutomo Tohi"'
Autor:
Sakurai Teruo, Atsutomo Tohi, Kiyoshi Yoneda, Shoji Kawabe, Kazuo Horie, Hidetoshi Nishi, Youichi Akasaka
Publikováno v:
Journal of Applied Physics. 44:220-224
The depth distributions of boron atoms and of radiation‐induced defects are measured in the same set of silicon samples implanted with 100‐keV boron ions at room temperature to a dose of 1×1016/cm2, by utilizing the 11B(p,α)8 Be nuclear reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39935b30fa138984b3282b52a23d8fff
https://doi.org/10.1063/1.1661865
https://doi.org/10.1063/1.1661865
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 21:483-485
The formation of aluminum-diffused deep layers using Al+ ion implantation into Si and low temperature annealing was investigated. The n-type Si (111) wafers were ion implanted with aluminum at 80 and 120 keV and doses in the range of 1 × 1013–5 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2068c794837cf8756ef71c59b84c3832
https://doi.org/10.1016/0168-583x(87)90884-6
https://doi.org/10.1016/0168-583x(87)90884-6
Autor:
Prussin, S., von der Ohe, W.
Publikováno v:
Journal of Applied Physics; Jul1980, Vol. 51 Issue 7, p3853-3859, 7p
Autor:
Akasaka, Youichi, Horie, Kazuo, Yoneda, Kiyoshi, Sakurai, Teruo, Nishi, Hidetoshi, Kawabe, Shoji, Tohi, Atsutomo
Publikováno v:
Journal of Applied Physics; Jan1973, Vol. 44 Issue 1, p220-224, 5p