Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Atsushi Tsurumaki-Fukuchi"'
Autor:
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achievi
Externí odkaz:
https://doaj.org/article/106d197d54a74c06a45ad89ae6aa61bc
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Multidot single-electron devices (SEDs) can enable new types of computing technologies, such as those that are reconfigurable and reservoir-computing. A self-assembled metal nanodot array film that is attached to multiple gates is a candidat
Externí odkaz:
https://doaj.org/article/4b34ebebcbf243f0a02f61d16caf57c3
Autor:
Takayuki Gyakushi, Yuki Asai, Shusaku Honjo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035230-035230-6 (2021)
In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural
Externí odkaz:
https://doaj.org/article/7bb6cb01c5ea415cbf0ad0b1e005002d
Autor:
Takafumi Uchida, Mingyu Jo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117144-117144-9 (2015)
Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the na
Externí odkaz:
https://doaj.org/article/a422ec8e341d433ea84bf126e4711f28
Publikováno v:
ECS Transactions. 104:93-101
Stable operations as resistive switching memory were demonstrated in amorphous TaOx (a-TaOx) thin films with very flat surfaces by conductive atomic force microscopy (c-AFM). The a-TaOx thin films fabricated on glass and Nb-doped SrTiO3 substrates by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cd1d6f1717f4179fe3789d72ab4af88
https://doi.org/10.1149/10404.0093ecst
https://doi.org/10.1149/10404.0093ecst
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8703cd2a566d1c97b35ff6c6f23245
https://doi.org/10.1109/snw56633.2022.9889054
https://doi.org/10.1109/snw56633.2022.9889054
Autor:
Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Masashi Arita, Takayoshi Katase, Toshio Kamiya
Publikováno v:
ACS Applied Materials & Interfaces. 12:28368-28374
Owing to the recent discovery of the current-induced metal-insulator transition and unprecedented electronic properties of the concomitant phases of calcium ruthenate Ca2RuO4, it is emerging as an important material. To further explore the properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4638ec9c983a43e095b5cbf66f36a716
https://doi.org/10.1021/acsami.0c05181
https://doi.org/10.1021/acsami.0c05181
Autor:
Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A. Mehonic, A. J. Kenyon
Publikováno v:
Electronic Materials: Science & Technology ISBN: 9783030424237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0d415e414a19cfdf24e2e289e5a6a2
https://doi.org/10.1007/978-3-030-42424-4_5
https://doi.org/10.1007/978-3-030-42424-4_5
Autor:
Hiroshi Inokawa, Akira Fujiwara, Masashi Arita, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Yukinori Ono, Katsuhiko Nishiguchi, Michito Sinohara
Publikováno v:
ECS Transactions. 92:47-56
Photo-excited carriers in Si quantum islands and their surrounded area exhibit interesting features due to electron-hole generation. We show Si single- hole transistor (SHT) characteristics in a Si single-electron transistor (SET) comprising n-type s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a058d2d9c58250bf94b348453a099309
https://doi.org/10.1149/09204.0047ecst
https://doi.org/10.1149/09204.0047ecst
Autor:
Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Masashi Arita, Yuki Asai, Takayuki Gyakushi, Beommo Byun
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
Single-electron devices (SEDs) composed of nanometer-scale dots have been attracted due to their low-power consumption and high functionality. In this paper, we fabricated double-gate SEDs formed by Fe nanodot array which showed periodic Coulomb bloc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3572f552281eac507db8e64f055b8d8d
https://doi.org/10.1109/snw50361.2020.9131663
https://doi.org/10.1109/snw50361.2020.9131663