Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Atsushi Tsurumaki‐Fukuchi"'
Autor:
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achievi
Externí odkaz:
https://doaj.org/article/106d197d54a74c06a45ad89ae6aa61bc
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Multidot single-electron devices (SEDs) can enable new types of computing technologies, such as those that are reconfigurable and reservoir-computing. A self-assembled metal nanodot array film that is attached to multiple gates is a candidat
Externí odkaz:
https://doaj.org/article/4b34ebebcbf243f0a02f61d16caf57c3
Autor:
Takayuki Gyakushi, Yuki Asai, Shusaku Honjo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035230-035230-6 (2021)
In metal-based single-electron devices (SEDs), charge-offset drift has been observed, which is a time-dependent instability caused by charge noise. This instability is an issue in the application of new information processing devices, such as neural
Externí odkaz:
https://doaj.org/article/7bb6cb01c5ea415cbf0ad0b1e005002d
Autor:
Takafumi Uchida, Mingyu Jo, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Akira Fujiwara, Yasuo Takahashi
Publikováno v:
AIP Advances, Vol 5, Iss 11, Pp 117144-117144-9 (2015)
Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the na
Externí odkaz:
https://doaj.org/article/a422ec8e341d433ea84bf126e4711f28
Publikováno v:
ACS Applied Materials & Interfaces. 15:16842-16852
Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff4503261f20e406b5f77774c04986e0
https://doi.org/10.1021/acsami.2c21568
https://doi.org/10.1021/acsami.2c21568
Autor:
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi
Publikováno v:
Advanced Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29fbf9fc3132780e2c35bc842176a91
https://doi.org/10.1002/aelm.202201303
https://doi.org/10.1002/aelm.202201303
Publikováno v:
ECS Transactions. 104:93-101
Stable operations as resistive switching memory were demonstrated in amorphous TaOx (a-TaOx) thin films with very flat surfaces by conductive atomic force microscopy (c-AFM). The a-TaOx thin films fabricated on glass and Nb-doped SrTiO3 substrates by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cd1d6f1717f4179fe3789d72ab4af88
https://doi.org/10.1149/10404.0093ecst
https://doi.org/10.1149/10404.0093ecst
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8703cd2a566d1c97b35ff6c6f23245
https://doi.org/10.1109/snw56633.2022.9889054
https://doi.org/10.1109/snw56633.2022.9889054
Autor:
Keiji Tsubaki, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Masashi Arita, Takayoshi Katase, Toshio Kamiya
Publikováno v:
ACS Applied Materials & Interfaces. 12:28368-28374
Owing to the recent discovery of the current-induced metal-insulator transition and unprecedented electronic properties of the concomitant phases of calcium ruthenate Ca2RuO4, it is emerging as an important material. To further explore the properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4638ec9c983a43e095b5cbf66f36a716
https://doi.org/10.1021/acsami.0c05181
https://doi.org/10.1021/acsami.0c05181
Autor:
Yuchao Yang, Yasuo Takahashi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, M. Moors, M. Buckwell, A. Mehonic, A. J. Kenyon
Publikováno v:
Electronic Materials: Science & Technology ISBN: 9783030424237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0d415e414a19cfdf24e2e289e5a6a2
https://doi.org/10.1007/978-3-030-42424-4_5
https://doi.org/10.1007/978-3-030-42424-4_5
