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Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)2O9/Pt capacitors during reductive annealing
Autor:
Atsushi Tofuku, Ichiro Koiwa, Yoshihiro Sawada, Tomohisa Yoshie, Hiroyo Kobayashi, Akira Hashimoto, Tetsuya Osaka
Publikováno v:
Scopus-Elsevier
Degradation mechanism of the Pt/SrBi2Ta2xO9/Pt and Pt/SrBi2(Ta1−x/Nbx)2O9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi2Ta2xO9(1 ≦ × ≦ 1.1) and SrBi2(Ta1−x/N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f0ecda30854e4bb79c2373811f3c06
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033314309&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033314309&partnerID=MN8TOARS
