Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Atsushi Teranishi"'
Autor:
Masahiro Asada, Atsushi Teranishi, Kaoru Shizuno, Safumi Suzuki, Haruki Yokoyama, Hiroki Sugiyama
Publikováno v:
Trans. Electron. IEICE of Japan. (no. 3):401-407
We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6-1THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4280016fe920e3a547c5264a599061a3
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100635080
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100635080
Autor:
Masahiro Asada, Kaoru Shizuno, Safumi Suzuki, Haruki Yokoyama, Hiroki Sugiyama, Atsushi Teranishi
Publikováno v:
IEICE Electronics Express. 9:385-390
Fundamental oscillations up to 1.08THz with the output power of 5.5 microwatts was achieved in GaInAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2e40709207569d7aee75809ff65a6ff
https://doi.org/10.1587/elex.9.385
https://doi.org/10.1587/elex.9.385
Publikováno v:
Journal of Crystal Growth. 336:24-28
On-wafer uniformity of InP-based InGaAs/AlAs resonant tunneling diodes (RTDs) grown in a mass-production-type metal–organic vapor-phase epitaxy (MOVPE) reactor was investigated. The X-ray diffraction (XRD) measurements revealed the high uniformity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9255808ad68ac564a9f2fd1050aed9c3
https://doi.org/10.1016/j.jcrysgro.2011.09.010
https://doi.org/10.1016/j.jcrysgro.2011.09.010
Publikováno v:
JSME International Journal Series B. 36:294-299
Effects of velocity gradient of linear shear flows at a high Reynolds number (Re, s=4000-35000) on lift and drag applied to a spherical particle are investigated by measuring surface pressure distribution, using a pendant method, and by comparing com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a63a86879dd4aa0a75f61af321551c
https://doi.org/10.1299/jsmeb.36.294
https://doi.org/10.1299/jsmeb.36.294
Publikováno v:
35th International Conference on Infrared, Millimeter, and Terahertz Waves.
We obtained increase in oscillation frequency of resonant tunneling diodes (RTDs) using graded emitter and thin barriers for reduced transit and tunneling times. The fundamental oscillation frequency of 1.04 THz was achieved with this structure. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::839d8ddb1c5f8d50ca62c1c64fbf5479
https://doi.org/10.1109/icimw.2010.5612616
https://doi.org/10.1109/icimw.2010.5612616
Autor:
Masahiro Asada, Safumi Suzuki, Atsushi Teranishi, Hiroki Sugiyama, M. Shiraishi, Haruki Yokoyama
Publikováno v:
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves.
A fundamental oscillation up to 915GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b581900d840078a46d768e43857ff369
https://doi.org/10.1109/icimw.2009.5324766
https://doi.org/10.1109/icimw.2009.5324766
Autor:
Masahiro Asada, Takatomo Enoki, Safumi Suzuki, Hiroki Sugiyama, Haruki Yokoyama, Atsushi Teranishi, Naoteru Shigekawa
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
This paper reports the metal-organic vapor-phase epitaxy (MOVPE) growth of ultra-thin InAlP/InGaAs heterojunctions for use as wet-etching stoppers in InP-based high electron mobility transistors (HEMTs) and as barriers in resonant tunneling diodes (R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ee8978278882e428bd300f68232f233
https://doi.org/10.1109/iciprm.2009.5012488
https://doi.org/10.1109/iciprm.2009.5012488
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials.
A fundamental oscillation of up to 831 GHz was observed at room temperature in GaInAs/AlAs resonant tunneling diodes integrated with planar slot antennas. The thickness of the collector spacer layer was optimized (20 nm) and the mesa area (≪1 µm2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a342b8d3584141da3505ed96672f6f0
https://doi.org/10.1109/iciprm.2009.5012476
https://doi.org/10.1109/iciprm.2009.5012476
Publikováno v:
2008 Device Research Conference.
We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum2 with the peak/valley current ratio of 1.5 was obtained f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aef794177c473183b5d68ab2a96d5096
https://doi.org/10.1109/drc.2008.4800832
https://doi.org/10.1109/drc.2008.4800832
Publikováno v:
Japanese Journal of Applied Physics. 53:031202
We report metal–organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) obse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32e8f2c322349493b2ba115bf9a19003
https://doi.org/10.7567/jjap.53.031202
https://doi.org/10.7567/jjap.53.031202