Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Atsushi Tanide"'
Autor:
Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Takahiro Kimura, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Osamu Oda, Masaru Hori
Publikováno v:
ACS Omega, Vol 5, Iss 41, Pp 26776-26785 (2020)
Externí odkaz:
https://doaj.org/article/245b6caa49c940b58b51a3d5470b652a
Autor:
Osamu Oda, Takahiro Kimura, Kazuo Kinose, Shigeru Takatsuji, Masaru Hori, Soichi Nadahara, Akira Horikoshi, Masazumi Nishikawa, Kenji Ishikawa, Akinori Ebe, Atsushi Tanide, Shohei Nakamura
Publikováno v:
ACS Omega, Vol 5, Iss 41, Pp 26776-26785 (2020)
ACS Omega
ACS Omega
The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hyd
Autor:
Shohei Nakamura, Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, Osamu Oda, Masaru Hori
Publikováno v:
Journal of Applied Physics. 133:043302
Damage-free atomic layer etching (ALE) of GaN was demonstrated using a cyclic process in which the chlorinated layer formed by Cl2 plasma exposure was removed by exposure to Ar plasma with energy-controlled ions when the substrate temperature was mai
Autor:
Makoto Sekine, Hiroki Kondo, Atsushi Tanide, Shohei Nakamura, Takayoshi Tsutsumi, Kenji Ishikawa, Masaki Hasegawa, Masaru Hori
Publikováno v:
Journal of Vacuum Science & Technology A. 38:042602
Gallium nitride (GaN) semiconductor devices must be fabricated using plasma etching with precise control of the etching depths and minimal plasma-induced damage on the atomic scale. A cyclic process comprising etchant adsorption and product removal m
Autor:
Shigeru Takatsuji, Makoto Sekine, Akira Horikoshi, Shohei Nakamura, Masaru Hori, Soichi Nadahara, Motohiro Kohno, Kazuo Kinose, Kenji Ishikawa, Atsushi Tanide
Publikováno v:
Journal of Vacuum Science & Technology B. 37:021209
Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl2–BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl2, straight sidewall shapes were achieved through BCl3 gas additio
Autor:
Soichi Nadahara, Masazumi Nishikawa, Shigeru Takatsuji, Akira Horikoshi, Motohiro Kohno, Akinori Ebe, Kazuo Kinose, Masaru Hori, Shohei Nakamura, Atsushi Tanide, Kenji Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 58:SAAF04
Publikováno v:
Journal of the Japan Institute of Metals. 69:457-459
We develop a method for high-speed and high-accuracy first-principles calculations to derive the ground-state electronic structure by directly minimizing the energy functional. Making efficient use of the advantages of the real-space finite-differenc
Publikováno v:
MATERIALS TRANSACTIONS. 45:1419-1421
We develop a method for high-speed and high-accuracy first-principles calculations to derive the ground-state electronic structure by directly minimizing the energy functional. Making efficient use of the advantages of the real-space finite-differenc
Autor:
Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Masazumi Nishikawa, Akinori Ebe, Kenji Ishikawa, Masaru Hori
Publikováno v:
Japanese Journal of Applied Physics; Feb2019, Vol. 58 Issue SA, p1-1, 1p