Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Atsushi Shigeta"'
Autor:
Yasushi Takeuchi, Atsushi Shigeta
Publikováno v:
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN. 24:411-417
To obtain design criteria of fixed-bed adsorbers for solvent recovery, experimental breakthrough curves were measured for single-, binary- and ternary-solvent vapor-activated carbon systems and for the same concentration ranges and the same flow rate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71efe13985fb73652974a1ca5b8c221
https://doi.org/10.1252/jcej.24.411
https://doi.org/10.1252/jcej.24.411
Autor:
Gaku Minamihaba, Yukiteru Matsui, Yoshikuni Tateyama, Atsushi Shigeta, Hiroyuki Yano, Nobuo Hayasaka, Takeshi Nishioka, K. Takahata
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
In order to reduce the focus error for the stacked mask process (SMAP) used in Cu/low-k dual damascene (DD) interconnect, a planarization technology of the under layer film by CMP was developed. Photo-resist was used for the under layer film. CMP slu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8f2d444b45acbb310cc2537b69f164
https://doi.org/10.1109/iitc.2005.1499963
https://doi.org/10.1109/iitc.2005.1499963
Autor:
Shin-ichiro Uekusa, Masako Kodera, Yoshitaka Matsui, Atsushi Shigeta, Shinya Takahashi, Manabu Tsujimura, Murato Kawai, Naoto Miyashita, Hiroshi Kawamoto
Publikováno v:
MRS Proceedings. 767
A new cleaning technique using gas dissolved water has been found to be effective in protecting against corrosion in aluminum metallization, which is also useful in post-cleaning of Cu CMP as already reported. Corrosion can be a significant concern i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a13298210e798828434286ede1ba61f
https://doi.org/10.1557/proc-767-f7.2
https://doi.org/10.1557/proc-767-f7.2
Autor:
Masako Kinoshita, Hirotaka Shida, Masabumi Masuko, Yoshikuni Tateyama, Atsushi Shigeta, Hiroyuki Yano, Satoko Seta, Yukiteru Matsui, Kazuo Nishimoto, Takeshi Nishioka
Publikováno v:
Journal of The Electrochemical Society. 156:H548
High performance photoresist planarization technology by chemical mechanical polishing (CMP) was developed for the trench-first Cu/low-k dual damascene (DD) process to reduce the focus error in the lithography process. To improve the planarity for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76b20c787236b1e973efd66b4ed8b862
https://doi.org/10.1149/1.3122883
https://doi.org/10.1149/1.3122883