Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Atsushi Ohtomo"'
Autor:
Atsushi Ohtomo, Yasuharu Sasaki
Publikováno v:
Journal of Robotics and Mechatronics. 13:238-244
A pneumatic actuator outputs large power in proportion to weight and can be installed in an inexpensive, light and compact configuration. From the standpoint of controllability, however, it is weak due to nonlinearity by compression and delayed trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1489d74cf2e45f96473912983fdfb4eb
https://doi.org/10.20965/jrm.2001.p0238
https://doi.org/10.20965/jrm.2001.p0238
Publikováno v:
IFAC Proceedings Volumes. 32:743-748
Robots utilized in the fields of welfare or agriculture should be light in weight and flexible in structure. A pneumatic actuator is considered as a candidate of actuators realizing such robots, because it is more powerful compared with a motor of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0993cdafd22526c643aa5d7dad7e8992
https://doi.org/10.1016/s1474-6670(17)56126-1
https://doi.org/10.1016/s1474-6670(17)56126-1
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
In sub-half micron CMOS, reduction of wiring capacitance is a key issue to improve the circuit performance because the ratio of wiring delay to total delay is increasing. In order to reduce the wiring capacitance, applying low dielectric materials to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678b8c4027dce6e184f8cb4bc6896cef
https://doi.org/10.1109/vlsit.1994.324378
https://doi.org/10.1109/vlsit.1994.324378
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc59e4e9369fd0467acbeda3a45fdb3
https://doi.org/10.7567/ssdm.1995.pc-3-7
https://doi.org/10.7567/ssdm.1995.pc-3-7
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eccc54006f89c3284c3847372db8ac36
https://doi.org/10.7567/ssdm.1993.pc-1-19
https://doi.org/10.7567/ssdm.1993.pc-1-19
Publikováno v:
Proceedings of thermal engineering conference. 2001:635-636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a27d046d0d53ffe34db509b187b93c
https://doi.org/10.1299/jsmeptec.2001.0_635
https://doi.org/10.1299/jsmeptec.2001.0_635
Publikováno v:
Japanese Journal of Applied Physics. 37:5843
A low dielectric fluorine-doped silicon oxide (SiOF) film, which was produced by adding C2F6 to the conventional chemical vapor deposited oxide, was applied to a 0.35 µm complementary metal oxide semiconductor (CMOS) and its influence on metal oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e9289b863c18312fe3986b63160d153
https://doi.org/10.1143/jjap.37.5843
https://doi.org/10.1143/jjap.37.5843
Autor:
Jiro Ida, Atsushi Ohtomo
Publikováno v:
Japanese Journal of Applied Physics. 37:1674
The TiSi2 local wiring technology has been newly characterized from the viewpoints of dopant interdiffusion and power reduction. It was found that only the p+/n junction degrades when TiSi2 local wiring connects the n+ layer and p+ layer. The results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd424cbd87426d5cfa7ec52e2d9590b3
https://doi.org/10.1143/jjap.37.1674
https://doi.org/10.1143/jjap.37.1674
Autor:
Izumi Aikawa, Akio Kita, Kiyotaka Yonekawa, Kazuhiko Kai, Kenji Nishi, Jiro Ida, Atsushi Ohtomo
Publikováno v:
Japanese Journal of Applied Physics. 33:475
It is concluded that in a shallow junction of post-junction silicide (PJS) scheme self-aligned silicide (SALICIDE) process, the decrease of impurity concentration at the TiSi2/Si interface significantly degrades performance of metal oxide semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6abb88a3c0dcff51f1d0bd24b69f1004
https://doi.org/10.1143/jjap.33.475
https://doi.org/10.1143/jjap.33.475
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