Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Atsushi Narazaki"'
Autor:
Takuya Yoshida, Taiki Hoshi, Haruhiko Minamitake, Koketsu Hidenori, Miyata Yusuke, Atsushi Narazaki, Suzuki Kenji, Yuki Haraguchi
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, the electric characteristics and DLTS profiles of 600V RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) with electron beam (EB) irradiation are compared in order to investigate the influence of wafer materials. Floating Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb238f5b53d85fc61a7370c93d3ee53
https://doi.org/10.23919/ispsd50666.2021.9452244
https://doi.org/10.23919/ispsd50666.2021.9452244
Autor:
Nishi Koichi, Atsushi Narazaki
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
CSTBT™ faces a complex tradeoff among E on/off -V CEsat -SOA and EMI noise. We propose a split-gate CSTBT™ to break up the complex tradeoff and introduce this novel structure to the RC-IGBT for the first time. The Miller capacitance was drastical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e476f3944bbff110598ec6bbd5d733
https://doi.org/10.1109/ispsd46842.2020.9170055
https://doi.org/10.1109/ispsd46842.2020.9170055
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, a newly developed low loss RC-IGBT is presented. In order to reduce the power loss of RC-IGBTs, we introduced two approaches. One is an optimization of dynamic feedback capacitance that induces a voltage tail and an increase of power l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::484aaf39d3805a1ba1357f64d6d4de17
https://doi.org/10.1109/ispsd46842.2020.9170184
https://doi.org/10.1109/ispsd46842.2020.9170184
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
As a compensation for the superior V CEsat , Carrier Stored Trench gate Bipolar Transistor (CSTBT™) has the more complex tradeoff among E on -V CEsat -SCSOA and EMI noise compared to IGBT. EMI noise evaluation is known to need special facilities su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a325dd43c0f30af3e2b9fa094003620b
https://doi.org/10.1109/ispsd.2019.8757663
https://doi.org/10.1109/ispsd.2019.8757663
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Using an advanced thin wafer technology, we have successfully fabricated the next generation 650V class IGBT with an improved SOA and maintaining the narrow distribution of the electrical characteristics for industrial applications. The applied techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d1e1f1e955370d6658228363a099c38
https://doi.org/10.1109/ispsd.2015.7123381
https://doi.org/10.1109/ispsd.2015.7123381
Autor:
Atsushi Narazaki, Kensuke Taguchi, Kazutoyo Takano, Shigenori Kido, Yusuke Fukada, Tomohide Terashima, Soneda Shinya, Tetsuo Takahashi
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
In this paper, we investigate a mechanism of drain-voltage oscillation of MOSFET under high dV/dt UIS condition by using numerical simulation and experiments. One of the trigger events of the oscillation is found to be the current path switching betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::934392411411ce43c4cc535e85b016c6
https://doi.org/10.1109/ispsd.2012.6229046
https://doi.org/10.1109/ispsd.2012.6229046
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
In this paper, we present the characteristics of a fabricated 600V CSTBT™ as the next generation IGBT. The techniques applied this novel device include about half-size shrinkage of the transistor unit cell with a fine pattern process and an LPT (Li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4ec1f9dcd70c9d83c806885eeb746a
https://doi.org/10.1109/ispsd.2012.6229045
https://doi.org/10.1109/ispsd.2012.6229045
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
Electrical characteristics of the fabricated 600V class CSTBT™ with a Light Punch Through (LPT) structure on an advanced thin wafer technology are presented for the first time. The electrical characteristics of LPT-CSTBT are superior to the convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd88c3f3e451054def514cee4c3362c1
https://doi.org/10.1109/ispsd.2011.5890792
https://doi.org/10.1109/ispsd.2011.5890792