Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Atsushi Ikari"'
Autor:
Shogo Nakamura, Kyoko Higuchi, Atsushi Ikari, Tetsuya Uesugi, Takahiro Hanaoka, Kota Ono, Masayuki Sue, Taira Makishima, Satoru Araki
Publikováno v:
Plant, Cell & Environment. 40:1609-1617
Many crops grow well on neutral or weakly acidic soils. The ability of roots to elongate under high-external pH would be advantageous for the survival of plants on alkaline soil. We found that root elongation was promoted in some plant species in alk
Autor:
Kyoko, Higuchi, Kota, Ono, Satoru, Araki, Shogo, Nakamura, Tetsuya, Uesugi, Taira, Makishima, Atsushi, Ikari, Takahiro, Hanaoka, Masayuki, Sue
Publikováno v:
Plant, cellenvironment. 40(8)
Many crops grow well on neutral or weakly acidic soils. The ability of roots to elongate under high-external pH would be advantageous for the survival of plants on alkaline soil. We found that root elongation was promoted in some plant species in alk
Publikováno v:
Solid State Phenomena. :11-16
Autor:
Kazuto Kawakami, Atsushi Ikari, Wataru Ohashi, Yoshiharu Inoue, Hideki Yokota, Katsuhiko Nakai, Jun Takahashi, Akiyoshi Tachikawa
Publikováno v:
Japanese Journal of Applied Physics. 42:363-370
Microvoid defects in nitrogen- and/or carbon-doped Czochralski-grown silicon crystals grown under various growth conditions were investigated by transmission electron microscopy. The morphology and volume of the void defects depended strongly on the
Autor:
Atsushi Ikari, Katsuhiko Nakai
Publikováno v:
Materia Japan. 42:521-528
Autor:
Akiyoshi Tachikawa, Hideki Yokota, Katsuhiko Nakai, Jun Takahashi, Yoshiharu Inoue, Wataru Ohashi, Atsushi Ikari, Kouichi Kitahara, Yasumitsu Ohta
Publikováno v:
Journal of Applied Physics. 89:4301-4309
Oxygen precipitate behavior of nitrogen-doped Czochralski-grown silicon (CZ-Si) crystals is investigated. It is found that nitrogen doping enhances oxygen precipitation after heat treatment. The oxygen precipitate volume density in nitrogen-doped cry
Autor:
Atsushi Ikari, Masao Kimura
Publikováno v:
Journal of Applied Physics. 89:2138-2145
Surface melting of Si(001) surface has been investigated by x-ray reflectivity up to the bulk melting temperature: Tm;b. An in situ system was designed for measurements of x-ray reflectivity at high temperatures under an atmosphere of He-gas flow. It
Autor:
Y. Tachikawa, Naoya Masahashi, Katsuhiko Nakai, Atsushi Ikari, Wataru Ohashi, Hiroyuki Deai, Shunichi Hayashi, Y. Hideki, Yasumitsu Ohta, Taizo Hoshino
Publikováno v:
Solid State Phenomena. :161-166
Publikováno v:
KAGAKU KOGAKU RONBUNSHU. 24:638-641
イオン交換樹脂をステンレス金網で包むことにより, 枕形充填物を作成した.60個の充填物を充填した, 回分蒸留用の実験装置を組み立てた.微量の酢酸エチルを含むエタノール水溶液を缶
Publikováno v:
KAGAKU KOGAKU RONBUNSHU. 24:111-115
オスマー型の装置を使用して, 微量のメタノール, イソバレルアルデヒドおよびジアセチルを含むエタノール系水溶液の気液平衡を, 12.7, 25.3および101.3kPaの定圧で測定した.各圧力における