Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Atsushi Hombe"'
Publikováno v:
Japanese Journal of Applied Physics. 62:SK1013
Perovskite solar cells are expected to be applied as photoreceivers for high-efficiency optical wireless power transfer for electric vehicles. The use of aluminum gallium nitride (AlGaN) as an electron transport layer (ETL) for wide-gap perovskite so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961e55dc28424709a87fb15a94bcc4b8
https://doi.org/10.35848/1347-4065/acc2ca
https://doi.org/10.35848/1347-4065/acc2ca
Autor:
E. V. Skorokhodov, Yushi Ota, N. A. Baidakova, Mikhail Shaleev, Atsushi Hombe, Noritaka Usami, D. V. Yurasov, E. E. Morozova, A. V. Novikov, Yasuyoshi Kurokawa
Publikováno v:
Materials Science in Semiconductor Processing. 75:143-148
Simple technique of formation of “black silicon” using wet chemical etching of crystalline Si wafers with SiGe self-assembled islands is proposed. The main idea consists of the utilization of SiGe islands as a mask for wet anisotropic etching of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d636497a6f621887beca6126791cb6
https://doi.org/10.1016/j.mssp.2017.11.032
https://doi.org/10.1016/j.mssp.2017.11.032
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Autor:
N. A. Baidakova, Noritaka Usami, A. V. Novikov, V. A. Verbus, Mikhail Shaleev, E. E. Morozova, Atsushi Hombe, Yasuyoshi Kurokawa, E. V. Skorohodov, D. V. Yurasov
Publikováno v:
Semiconductors. 51:1542-1546
Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74576dfdde5f0b0b9e1d575f1c8ec087
https://doi.org/10.1134/s1063782617120028
https://doi.org/10.1134/s1063782617120028
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
Novel light trapping structure was fabricated on crystalline silicon wafers by KOH etching using Ge dots as an etching mask. In this method, it is found that the density of Ge dots before etching is important for the density of nanostructure after et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35be936ed809311c0d2c8d00beb1770
https://doi.org/10.1109/nano.2016.7751354
https://doi.org/10.1109/nano.2016.7751354
Autor:
Yuzo Yamamoto, Kazuhiro Gotoh, A. V. Novikov, D. V. Yurasov, Seimei Akagi, Yasuyoshi Kurokawa, Noritaka Usami, Atsushi Hombe
Publikováno v:
Japanese Journal of Applied Physics. 57:08RF09
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ea63ee76e9597d79fdcb9535f98b26
https://doi.org/10.7567/jjap.57.08rf09
https://doi.org/10.7567/jjap.57.08rf09
Autor:
A. V. Novikov, Elena Morozova, Yushi Ota, Mikhail Shaleev, Natalie Baidakova, Atsushi Hombe, Yasuyoshi Kurokawa, Ryota Nezasa, D. V. Yurasov, Noritaka Usami
Publikováno v:
Japanese Journal of Applied Physics. 57:08RB04
A high-performance light-trapping structure for Si was fabricated with an etching margin of only ~1 µm using Ge islands grown by gas-source molecular beam epitaxy as etching masks. KOH solution containing isopropyl alcohol and HF + H2O2 + CH3COOH mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ed53f4d5b158bfcd11d499ae87312d
https://doi.org/10.7567/jjap.57.08rb04
https://doi.org/10.7567/jjap.57.08rb04
Publikováno v:
Физика и техника полупроводников. 51:1599
В работе для растворов КОН и HF:H2O2:CH3COOH исследована селективность травления SiGe-структур в зависимости от их состава. Полученные результат
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f76d3c5a0fd094a0d35592b77c2b4a5d
https://doi.org/10.21883/ftp.2017.12.45170.33
https://doi.org/10.21883/ftp.2017.12.45170.33
Autor:
Atsushi Hombe, Yasuyoshi Kurokawa, Kazuhiro Gotoh, Seimei Akagi, Yuzo Yamamoto, Dmitry Yurasov, Alexey Novikov, Noritaka Usami
Publikováno v:
Japanese Journal of Applied Physics; Aug2018 Supplement, Vol. 57 Issue 8S3, p1-1, 1p
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO); 2016, p357-360, 4p