Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Atsushi Azuma"'
Autor:
Yuki Kurihara, Atsushi Azuma, Haruka Yasufuku, Shinsaku Takikawa, Noritaka Chida, Takaaki Sato
Publikováno v:
Chemistry Letters. 51:1146-1149
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6acaf7f114618632369557db8cd6a069
https://doi.org/10.1246/cl.220452
https://doi.org/10.1246/cl.220452
Autor:
William Plunkett, Walter Hittelman, Akira Matsuda, Peng Huang, Atsushi Azuma, Sherri Chubb, Yingjun Jiang, Yexiong Li, Ying Guo, Xiaojun Liu
Legends to Supplementary Figures and Table from Molecular Basis for G2 Arrest Induced by 2′-C-Cyano-2′-Deoxy-1-β-d-Arabino-Pentofuranosylcytosine and Consequences of Checkpoint Abrogation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::641bdb4dcc4ce9ac9d9eccc6f51d38cf
https://doi.org/10.1158/0008-5472.22363677
https://doi.org/10.1158/0008-5472.22363677
Autor:
William Plunkett, Walter Hittelman, Akira Matsuda, Peng Huang, Atsushi Azuma, Sherri Chubb, Yingjun Jiang, Yexiong Li, Ying Guo, Xiaojun Liu
2′-C-cyano-2′-deoxy-1-β-d-arabino-pentofuranosylcytosine (CNDAC) is a nucleoside analogue with a novel mechanism of action that is currently being evaluated in clinical trials. Incorporation of CNDAC triphosphate into DNA and extension during re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f7ec1291ca2833a2dbd3e4aa05c0bbb
https://doi.org/10.1158/0008-5472.c.6493833.v1
https://doi.org/10.1158/0008-5472.c.6493833.v1
Autor:
Atsushi Azuma, Toyokazu Seki, Masashi Aoyama, Takako Nakashima, Hideki Kawasome, Kazuyuki Fujii
Publikováno v:
Digestive diseases and sciences. 67(7)
Since gut microbiota is involved in the pathogenesis of inflammatory bowel disease (IBD), antibiotics or probiotics may be attractive options for the treatment of IBD. Akkermansia muciniphila is expected as a next-generation probiotic for IBD, and OP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d38e93445a8e26f09e912c527bb57ef
https://pubmed.ncbi.nlm.nih.gov/34259969
https://pubmed.ncbi.nlm.nih.gov/34259969
Publikováno v:
ECS Transactions. 86:13-21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0976a5fbb06c7fb3099c09d37f6a118a
https://doi.org/10.1149/08603.0013ecst
https://doi.org/10.1149/08603.0013ecst
Publikováno v:
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Resistive random access memory (ReRAM) devices with a Hf02 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. In this work, we studied the Hf thickness dependence of the resistanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedb87ebfb5c737759e0d33f508c9f51
https://doi.org/10.1109/imfedk.2018.8581952
https://doi.org/10.1109/imfedk.2018.8581952
Publikováno v:
2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We studied Ti/HfOx/Pt ReRAM device switching characteristics as a function of Hf02 sputtering condition. Hf02 films were formed with DC reactive sputtering at various (O 2 / Ar) flow ratios between 0.25 and 2.5. The most stable repetition of switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::992bdc74e44fffc50281c3e03b9752e6
https://doi.org/10.1109/imfedk.2018.8581974
https://doi.org/10.1109/imfedk.2018.8581974
Autor:
Ryo Nakajima, Takeshi Ito, Tomohiro Shimizu, Syouso Shingubara, Hayato Yoshida, Atsushi Azuma
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
We studied Ti/HfO 2 /Pt ReRAM device switching characteristics as a function of HfO 2 sputtering condition. HfO 2 film were formed with DC reactive sputtering with various (O 2 /Ar) flow ratios between 0.25 and 2.5. The most stable repetition of swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e571ab371ab437625adaa0d226eab55
https://doi.org/10.1109/edtm.2018.8421516
https://doi.org/10.1109/edtm.2018.8421516
Publikováno v:
Japanese Journal of Applied Physics. 58:SDDF11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee364352179207869f314010b5b7d77e
https://doi.org/10.7567/1347-4065/ab12c5
https://doi.org/10.7567/1347-4065/ab12c5
Publikováno v:
ECS Meeting Abstracts. :745-745
ReRAM is one of promising nonvolatile memories with excellent properties such as low power, high switching speed, and scalability against downsizing. Recently, ReRAM has been attracted attention as artificial neuron devices such as synapse which chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9cae00db4a728a735317c1652babfd
https://doi.org/10.1149/ma2018-02/18/745
https://doi.org/10.1149/ma2018-02/18/745