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of 82
pro vyhledávání: '"Atsushi Ashida"'
Autor:
Atsushi Ashida, Tomoko Kojiri
Publikováno v:
Journal of Information and Telecommunication, Vol 3, Iss 1, Pp 57-73 (2019)
When starting to write a novel, an author often creates a structure for it, which is called the plot. The format of plots is not defined, and authors create plots using their own format. Unfortunately, plots often do not include sufficient informatio
Externí odkaz:
https://doaj.org/article/1bd17fd9626f4e969a15a66550456cff
Publikováno v:
Applied Sciences, Vol 11, Iss 8, p 3530 (2021)
A direct band gap nature in semiconducting materials makes them useful for optical devices due to the strong absorption of photons and their luminescence properties. Monolayer transition metal dichalcogenides (TMDCs) have received significant attenti
Externí odkaz:
https://doaj.org/article/09b54c2b87c64d2b8e64d4691bd4934b
Autor:
Yuki Yamada, Norifumi Fujimura, Sakura N. Takeda, Kuniharu Takei, Kazunari Matsuda, Keisuke Shinokita, Daisuke Kiriya, Takeshi Yoshimura, Yuji Matsushita, Atsushi Ashida, Yasuo Okajima
Publikováno v:
ACS Applied Materials & Interfaces. 12:36496-36504
To advance the development of atomically thin optoelectronics using two-dimensional (2D) materials, engineering strong luminescence with a physicochemical basis is crucial. Semiconducting monolayer transition-metal dichalcogenides (TMDCs) are candida
Autor:
Takeshi Yoshimura, Norifumi Fujimura, Atsushi Ashida, Yuki Yamada, Kazunari Matsuda, Hidekazu Ikeno, Keisuke Shinokita, Daisuke Kiriya, Yan Zhang
Publikováno v:
ACS applied materialsinterfaces. 13(21)
Due to the direct band gap nature, extensive studies have been conducted to improve the optical behavior in monolayer transition metal dichalcogenides (TMDCs) with a formula of MX2 (M = Mo, W; X = S, Se, Te). One of the strongest modulating agents of
Autor:
Akito Fukui, Keigo Matsuyama, Norifumi Fujimura, Daisuke Kiriya, Hisashi Ichimiya, Takeshi Yoshimura, Kohei Miura, Atsushi Ashida, Yuki Aoki, Yuki Yamada
Publikováno v:
ChemistryOpen
ChemistryOpen, Vol 8, Iss 7, Pp 908-914 (2019)
ChemistryOpen, Vol 8, Iss 7, Pp 908-914 (2019)
Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post‐silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non‐destructive modulation
Autor:
Akito Fukui, Norifumi Fujimura, Atsushi Ashida, Masahiro Takinoue, Takeshi Yoshimura, Hisashi Ichimiya, Daisuke Kiriya
Publikováno v:
ACS Applied Materials & Interfaces. 11:15922-15926
Modulating the electronic structure of semiconducting materials is critical to developing high-performance electronic and optical devices. Transition metal dichalcogenides (TMDCs) are atomically thin semiconducting materials. However, before they can
Autor:
Tomoko Kojiri, Atsushi Ashida
Publikováno v:
Journal of Information and Telecommunication, Vol 3, Iss 1, Pp 57-73 (2019)
When starting to write a novel, an author often creates a structure for it, which is called the plot. The format of plots is not defined, and authors create plots using their own format. Unfortunately, plots often do not include sufficient informatio
Autor:
Atsushi Ashida, Daisuke Kiriya, Ryo Kitaura, Takeshi Yoshimura, Jenny Pirillo, Akihiko Murai, Yuh Hijikata, Norifumi Fujimura
Publikováno v:
Langmuir. 34:10243-10249
Monolayer molybdenum disulfide (MoS2) is an atomically thin semiconducting material with a direct band gap. This physical property is attributable to atomically thin optical devices such as sensors, light-emitting devices, and photovoltaic cells. Rec
Autor:
Akito Fukui, Atsushi Ashida, Takeshi Yoshimura, Hisashi Ichimiya, Kuniharu Takei, Keigo Matsuyama, Yuki Aoki, Norifumi Fujimura, Daisuke Kiriya, Ryo Nouchi
Publikováno v:
Nanotechnology. 33:075602
Graphene nanoribbon (GNR)-based materials are a promising device material because of their potential high carrier mobility and atomically thin structure. Various approaches have been reported for preparing the GNR-based materials, from bottom-up chem
Publikováno v:
Journal of Crystal Growth. 468:696-700
Rare earth element, Ce, doped Ge (Ge:Ce) three-dimensional crystal is fabricated on Si (001) via a solid source low-temperature molecular beam epitaxy. Ce affects the formation of the self-assembled Ge dot, including its structure, initial growth and