Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Atsunori Mochida"'
Autor:
Hiroyuki Hagino, Masao Kawaguchi, Shinichiro Nozaki, Atsunori Mochida, Takashi Kano, Hideo Yamaguchi, Masaharu Fukakusa, Shinichi Takigawa, Toshihiro Koga, Takuma Katayama
Publikováno v:
IEEE Photonics Technology Letters. 34:779-782
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84b82356d3adcef6d5f85a986e098aa8
https://doi.org/10.1109/lpt.2022.3187672
https://doi.org/10.1109/lpt.2022.3187672
Autor:
Takashi Kano, Hiroyuki Hagino, Shinichi Takigawa, Tsuyoshi Tanaka, Takuma Katayama, Atsunori Mochida, Shinichiro Nozaki, Masao Kawaguchi
Publikováno v:
IEEE Journal of Quantum Electronics. 57:1-7
Both high-beam-quality and high-power operation of InGaN laser array are realized by lateral-corrugated waveguides (LCWG) with reduced higher-order transverse modes. In our proposed structure, the number of higher-order modes supported by the wavegui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ec5af436d6a6eac585eb79fd937208c
https://doi.org/10.1109/jqe.2021.3109281
https://doi.org/10.1109/jqe.2021.3109281
Autor:
Shinichiro Nozaki, Takuma Katayama, Shinichi Takigawa, Masao Kawaguchi, Atsunori Mochida, Takahiro Nibu, Tsuyoshi Tanaka, Takashi Kano, Hiroyuki Hagino
Publikováno v:
2020 IEEE Photonics Conference (IPC).
Both high-beam-quality and high-power operation of InGaN laser diodes are realized by lateral corrugated waveguides with reduced higher-order transverse modes. As a result, lateral beam-quality factor is reduced from 8.8 (straight waveguide) to 3.8 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::362fade15afbe66238c2b56d4dea9ecc
https://doi.org/10.1109/ipc47351.2020.9252291
https://doi.org/10.1109/ipc47351.2020.9252291
Autor:
Kouji Oomori, Atsunori Mochida, Hiroyuki Hagino, Shinichi Takigawa, Takahiro Nibu, Takashi Kano, Masao Kawaguchi, Takuma Katayama, Tsuyoshi Tanaka, Shinichiro Nozaki
Publikováno v:
High-Power Diode Laser Technology XVIII.
A smile-suppressed high-power InGaN laser array has been developed for a high beam quality material processing light source. The smile effect becomes apparent especially in InGaN laser array with large chip curvature due to lattice mismatch of epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58ba4816d3439ebb3259f14727e5d32
https://doi.org/10.1117/12.2544184
https://doi.org/10.1117/12.2544184
Autor:
Atsunori Mochida, Shinichiro Nozaki, Hiroyuki Hagino, Kouji Oomori, Koshi Nakamura, Tsuyoshi Tanaka, Takuma Katayama, Masao Kawaguchi, Takayuki Yoshida, Shinichi Takigawa
Publikováno v:
The Review of Laser Engineering. 47:204
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b2c32895e7ed7194648b64009cab45
https://doi.org/10.2184/lsj.47.4_204
https://doi.org/10.2184/lsj.47.4_204
Autor:
Toshitaka Shimamoto, Gaku Sugahara, Atsunori Mochida, Yasutoshi Kawaguchi, Akihiko Ishibashi, Toshiya Yokogawa
Publikováno v:
physica status solidi (c). :2107-2110
A high quality AlGaN layer with low dislocation density and low c-axis tilt angle in wing regions was demonstrated by the advanced ELO technique, namely air-bridged lateral epitaxial growth. An underlying GaN seed layer was grooved along the 〈〉Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2dc666a9ec465ae213e0d032820b9e9
https://doi.org/10.1002/pssc.200303412
https://doi.org/10.1002/pssc.200303412
Autor:
Kiminori Mizuuchi, Hirokazu Shimizu, Ken'ichi Kasazumi, Masaaki Yuri, Akihiro Morikawa, Toshifumi Yokoyama, Shinichi Takigawa, Kazuhisa Yamamoto, Tomoya Sugita, Toru Takayama, Atsunori Mochida, Yasuo Kitaoka, Kenji Orita
Publikováno v:
The Review of Laser Engineering. 30:676-680
We demonstrate highly efficient frequency doubling of a 160 mW-AlGaAs three-section tunable distributed Bragg reflector (DBR) laser diode with real refractive-index-guided structure in a quasi-phase-matched second harmonic generation (QPM-SHG) ridge-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf277a745d23b40215eaf5a62cc356e8
https://doi.org/10.2184/lsj.30.676
https://doi.org/10.2184/lsj.30.676
Autor:
Yasuhiro Kobayashi, Toshiya Fukuhisa, Toshikazu Ohnishi, Kunio Itoh, Masaaki Yuri, Atsunori Mochida, Osamu Imafuji, Hirokazu Shimizu
Publikováno v:
The Review of Laser Engineering. 30:128-132
780 nm-band AlGaAs and 650 nm-band AlGaInP laser diodes are monolithically integrated on a GaAs substrate as the light source in DVD/CD optical pickups. In order to reduce internal losses for improved characteristics and to ensure better flexibility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b9d45dab1e1702470706aa8170f83c
https://doi.org/10.2184/lsj.30.128
https://doi.org/10.2184/lsj.30.128
Autor:
Kenji Orita, Masaaki Yuri, Toru Takayama, Hirokazu Shimizu, Toshikazu Ohnishi, Satoshi Tamura, Atsunori Mochida
Publikováno v:
Novel In-Plane Semiconductor Lasers.
High-power (>100mW) 820 nm-band distributed Bragg reflector (DBR) laser diodes (LDs) with stable fundamental transverse mode operation and continuous wavelength tuning characteristics have been developed. To obtain high-power LDs with a stable fundam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e47e4610aadbe73ac1d9c752ff23312
https://doi.org/10.1117/12.467965
https://doi.org/10.1117/12.467965
Publikováno v:
ECS Meeting Abstracts. :2150-2150
We have clarified the compositional dependence of the thermal stabilities and chemical structures of aluminum oxynitride (AlON) films. Thermally induced changes in composition and structure of AlON with various compositional ratio (R=N/(N+O)) have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aba0658cb5f780f31480006f28b4e91b
https://doi.org/10.1149/ma2008-02/32/2150
https://doi.org/10.1149/ma2008-02/32/2150