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pro vyhledávání: '"Atsuko Kimoto"'
Autor:
Koji Nakayama, Akihiro Koyama, Yuji Kiuchi, Atsuko Kimoto, Tomohisa Kato, Kensuke Takenaka, Tomonori Mizushima, Yoshiyuki Yonezawa, Hitoshi Ishimori, Mitsuru Sometani, Hajime Okumura, Shinichiro Matsunaga, Manabu Takei
Publikováno v:
Materials Science Forum. 1004:899-904
We demonstrate 20 kV-class 4H-SiC n-channel implantation and epitaxial (IE)-IGBTs having both low on-state voltage and high blocking characteristics. We fabricated n-IE-IGBTs on a (0001) silicon face with free-standing epitaxial layers. Effective car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9570d5bf891e0b47ee1380788f46e62b
https://doi.org/10.4028/www.scientific.net/msf.1004.899
https://doi.org/10.4028/www.scientific.net/msf.1004.899
