Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Atomschichtepitaxie"'
Autor:
Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Publikováno v:
ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062
The atomic layer deposition (ALD) of copper oxide films from [(nBu3P)2Cu(acac)] and wet oxygen on SiO2 and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO2, along with
Autor:
Waechtler, Thomas, Oswald, Steffen, Roth, Nina, Jakob, Alexander, Lang, Heinrich, Ecke, Ramona, Schulz, Stefan E., Gessner, Thomas, Moskvinova, Anastasia, Schulze, Steffen, Hietschold, Michael
Publikováno v:
Journal of The Electrochemical Society, Vol. 156, No. 6, pp. H453-H459 (2009); Digital Object Identifier (DOI): 10.1149/1.3110842
The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(nBu3P)2Cu(acac)], and wet O2 on Ta, TaN, Ru and SiO2 substrates at temperatures of < 16
Autor:
Melzer, Marcel, Waechtler, Thomas, Müller, Steve, Fiedler, Holger, Hermann, Sascha, Rodriguez, Raul D., Villabona, Alexander, Sendzik, Andrea, Mothes, Robert, Schulz, Stefan E., Zahn, Dietrich R.T., Hietschold, Michael, Lang, Heinrich, Gessner, Thomas
Publikováno v:
Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026
The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Z
Autor:
Thomas Gessner, Holger Fiedler, Heinrich Lang, Sascha Hermann, Andrea Sendzik, Alexander Villabona, Marcel Melzer, Steve MüLler, Thomas Waechtler, Robert Mothes, Dietrich R. T. Zahn, Michael Hietschold, Stefan E. Schulz, Raul D. Rodriguez
Publikováno v:
Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026
The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::016194155f04635c6859defe4b274da0
https://monarch.qucosa.de/id/qucosa:19886
https://monarch.qucosa.de/id/qucosa:19886
Autor:
Melzer, Marcel
Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that the decoration of CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu instead of the currently used SiO2 can enha
Autor:
Wächtler, Thomas
Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several
Autor:
Wächtler, Thomas
Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______218::c70bc7e351739e39b4f0719c08596d44
https://monarch.qucosa.de/id/qucosa:19323
https://monarch.qucosa.de/id/qucosa:19323
Autor:
Waechtler, T., Oswald, S., Roth, N., Jakob, A., Lang, H., Ecke, R., Schulz, S.E., Gessner, T., Moskvinova, A., Schulze, S., Hietschold, M.
Publikováno v:
Journal of The Electrochemical Society, Vol. 156, No. 6, pp. H453-H459 (2009); Digital Object Identifier (DOI): 10.1149/1.3110842
The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(nBu3P)2Cu(acac)], and wet O2 on Ta, TaN, Ru and SiO2 substrates at temperatures of < 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::773d0b20091de783d7362099c50ee2db
https://monarch.qucosa.de/id/qucosa:19121
https://monarch.qucosa.de/id/qucosa:19121
Autor:
Yu, Chol-Jun
Publikováno v:
Aachen : Publikationsserver der RWTH Aachen University III, 164 S. : graph. Darst. (2009). = Aachen, Techn. Hochsch., Diss., 2009
Atomistic simulation technique such as first-principles, molecular dynamics and Monte Carlo methods has been recognised as a powerful engineering tool to design a new functional material. It serves as the most fundamental procedure to construct a rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______791::668a0407c6451261836b41a0363531d6
https://publications.rwth-aachen.de/record/51104
https://publications.rwth-aachen.de/record/51104