Zobrazeno 1 - 10
of 310 335
pro vyhledávání: '"AtoM"'
Autor:
Watwood, Nate1 nwatwood@anl.gov, Jiang, Cheng Lie1 cjiang@anl.gov, Henning, Walter1, Hoffman, Calem1, Kay, Ben1
Publikováno v:
EPJ Web of Conferences. 10/18/2024, Vol. 306, p1-7. 7p.
Autor:
Bonhommeau, David A.1 (AUTHOR) dbonhommeau@univ-evry.fr
Publikováno v:
Journal of Chemical Physics. 11/14/2024, Vol. 161 Issue 18, p1-10. 10p.
Autor:
Klos, Jan1 (AUTHOR), Tröger, Jan2,3 (AUTHOR), Keutgen, Jens4 (AUTHOR), Losert, Merritt P.5 (AUTHOR), Abrosimov, Nikolay V.6 (AUTHOR), Knoch, Joachim7 (AUTHOR), Bracht, Hartmut2 (AUTHOR), Coppersmith, Susan N.8 (AUTHOR), Friesen, Mark5 (AUTHOR), Cojocaru‐Mirédin, Oana4,9 (AUTHOR) Oana.Cojocaru-Miredin@mail.inatech.uni-freiburg.de, Schreiber, Lars R.1,10 (AUTHOR) lars.schreiber@physik.rwth-aachen.de, Bougeard, Dominique11 (AUTHOR) Dominique.Bougeard@ur.de
Publikováno v:
Advanced Science. 11/13/2024, Vol. 11 Issue 42, p1-12. 12p.
Autor:
Zhang, Dapeng1 (AUTHOR) zhang.dapeng.c5@tohoku.ac.jp, Kishimoto, Naoki1 (AUTHOR) kishimoto@tohoku.ac.jp
Publikováno v:
Molecules. Nov2024, Vol. 29 Issue 21, p5075. 16p.
Autor:
Li, Jiaqing1 (AUTHOR), Zheng, Zhiye1 (AUTHOR), Yu, Xi1 (AUTHOR), Lu, Kai1 (AUTHOR) lu.kai@fzu.edu.cn, Liang, Huilong1 (AUTHOR), Yin, Pengbo1 (AUTHOR), Teng, Lin1 (AUTHOR) tenglin@fzu.edu.cn, Zhang, Che2 (AUTHOR), Deng, Guanyu3 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 10/28/2024, Vol. 136 Issue 16, p1-15. 15p.
Autor:
Lin, Yan-Ru1 (AUTHOR) liny@ornl.gov, Zhao, Yajie1,2 (AUTHOR) suy1@ornl.gov, Su, Yi-Feng1 (AUTHOR), Byun, Thak Sang1 (AUTHOR) liny@ornl.gov
Publikováno v:
Materials (1996-1944). Oct2024, Vol. 17 Issue 19, p4763. 20p.
Autor:
OBADA, A.-S. F.1, AHMED, M. M. A.1, KHALIL, E. M.1,2, RABEA, R. N.3 rabei.rash@azhar.edu.eg, EL-DEBERKY, M. A.3
Publikováno v:
Nonlinear Optics, Quantum Optics: Concepts in Modern Optics. 2024, Vol. 60 Issue 1/2, p1-19. 19p.
Autor:
Trejo, Marisol1 (AUTHOR), Clifford, Andrew1 (AUTHOR), Alfonso, Ernesto Garcia2 (AUTHOR), Halberstadt, Nadine2 (AUTHOR), Xue, Lan3 (AUTHOR), Kong, Wei1 (AUTHOR) Wei.Kong@oregonstate.edu
Publikováno v:
Journal of Chemical Physics. 8/7/2024, Vol. 161 Issue 5, p1-10. 10p.
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.
Autor:
Uzuhashi, Jun1,2 (AUTHOR) uzuhashi.jun@nims.go.jp, Chen, Jun1 (AUTHOR) chen.jun@nims.go.jp, Tanaka, Ryo3 (AUTHOR), Takashima, Shinya3 (AUTHOR), Edo, Masaharu3 (AUTHOR), Ohkubo, Tadakatsu1 (AUTHOR), Sekiguchi, Takashi1,2 (AUTHOR)
Publikováno v:
Journal of Applied Physics. 8/7/2024, Vol. 136 Issue 5, p1-7. 7p.
Autor:
Oks, Eugene1 (AUTHOR) oksevgu@auburn.edu
Publikováno v:
Symmetry (20738994). Aug2024, Vol. 16 Issue 8, p1009. 11p.