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pro vyhledávání: '"Atkins, Z. J."'
Publikováno v:
Appl. Phys. Lett. 105, 063107 (2014)
We demonstrate highly-tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15N+ ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as
Externí odkaz:
http://arxiv.org/abs/1407.1434