Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Atindra Nath Pal"'
Autor:
Shubhrasish Mukherjee, Gaurab Samanta, Md Nur Hasan, Shubhadip Moulick, Ruta Kulkarni, Kenji Watanabe, Takashi Taniguchi, Arumugum Thamizhavel, Debjani Karmakar, Atindra Nath Pal
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract Focusing on Rhenium disulfide (ReS2), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve a
Externí odkaz:
https://doaj.org/article/d9855c9a069a41cfb23e45ce6fc11065
Autor:
Riju Pal, Buddhadeb Pal, Suchanda Mondal, Rajesh O. Sharma, Tanmoy Das, Prabhat Mandal, Atindra Nath Pal
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-11 (2024)
Abstract Non-trivial spin textures driven by strong exchange interaction, magneto-crystalline anisotropy, and electron correlation in a low-dimensional magnetic material often lead to unusual electronic transitions. Through a combination of transport
Externí odkaz:
https://doaj.org/article/e6cc4520430a44d99c5fca28512c1037
Autor:
Atindra Nath Pal, Dongzhe Li, Soumyajit Sarkar, Sudipto Chakrabarti, Ayelet Vilan, Leeor Kronik, Alexander Smogunov, Oren Tal
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Quantum interference can be used to control electronic transport with high sensitivity at the nanoscale. Pal et al. show that without the need for magnetic materials, quantum interference can also filter spin transport approaching the limit of ideal
Externí odkaz:
https://doaj.org/article/7a3b73051a6f40509840affc7d2d667d
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1471-1477 (2018)
Single-molecule junctions are versatile test beds for electronic transport at the atomic scale. However, not much is known about the early formation steps of such junctions. Here, we study the electronic transport properties of premature junction con
Externí odkaz:
https://doaj.org/article/d072281f18654630a5082612316505e4
Autor:
Atindra Nath Pal, Susanne Müller, Thomas Ihn, Klaus Ensslin, Thomas Tschirky, Christophe Charpentier, Werner Wegscheider
Publikováno v:
AIP Advances, Vol 5, Iss 7, Pp 077106-077106-5 (2015)
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the e
Externí odkaz:
https://doaj.org/article/3d2655b9b19e4dd184f5f0992a71e37e
Publikováno v:
ACS Applied Materials & Interfaces. 14:34875-34883
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::744cd1d7302ee4c11104d088cbdfb26a
https://doi.org/10.1021/acsami.2c08933
https://doi.org/10.1021/acsami.2c08933
Autor:
Shubhrasish Mukherjee, Didhiti Bhattacharya, Sumanti Patra, Sanjukta Paul, Rajib Kumar Mitra, Priya Mahadevan, Atindra Nath Pal, Samit Kumar Ray
Publikováno v:
ACS Applied Materials & Interfaces. 14:5775-5784
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b9187913cf48ff2bc1adfb9513f56d
https://doi.org/10.1021/acsami.1c18999
https://doi.org/10.1021/acsami.1c18999
In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance is modifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd960d554689e24fe668b2efd6aa5bf4
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-503244
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-503244
Autor:
Biswajit Pabi, Atindra Nath Pal
Publikováno v:
Pramana. 97
Understanding the transport characteristics at the atomic limit is the prerequisite for futuristic nano-electronic applications. Among various experimental procedures, mechanically controllable break junction (MCBJ) is one of the well adopted experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bcb9d3e1c84cc4db4c208fdcab0ad78
https://doi.org/10.1007/s12043-022-02489-7
https://doi.org/10.1007/s12043-022-02489-7
Publikováno v:
ACS applied materialsinterfaces. 14(45)
The substrate plays a crucial role in determining the transport and low-frequency noise behavior of graphene field-effect devices. Typically, a heavily doped Si/SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::219304071ab67aa410292303026476af
https://pubmed.ncbi.nlm.nih.gov/36323003
https://pubmed.ncbi.nlm.nih.gov/36323003