Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Athith Krishna"'
Publikováno v:
Crystals, Vol 12, Iss 6, p 784 (2022)
The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride
Externí odkaz:
https://doaj.org/article/32cf035967734f23bf9cca9159e2aebc
Autor:
Aditya Raj, Athith Krishna, Brian Romanczyk, Nirupam Hatui, Wenjian Liu, Stacia Keller, Umesh K. Mishra
Publikováno v:
IEEE Electron Device Letters. 44:9-12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7d59e73b8339c3ace5ac6fe37601576
https://doi.org/10.1109/led.2022.3223331
https://doi.org/10.1109/led.2022.3223331
Autor:
Stacia Keller, Weiyi Li, Christian Wurm, Umesh K. Mishra, Matthew Guidry, Nirupam Hatui, Athith Krishna, Brian Romanczyk
Publikováno v:
IEEE Electron Device Letters. 41:1633-1636
This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been the substrate of choice to achieve the highest level of performance, sapphire substrates are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a96a44c2939173642d5807e1336e3678
https://doi.org/10.1109/led.2020.3022401
https://doi.org/10.1109/led.2020.3022401
Autor:
Umesh K. Mishra, Athith Krishna, Matthew Guidry, James F. Buckwalter, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Pawana Shrestha, Shubhra S. Pasayat, Christian Wurm, Stacia Keller
Publikováno v:
IEEE Electron Device Letters. 41:681-684
Though GaN HEMTs have primarily been used for power amplification, they are also well suited for receiver applications. In the front-end of receivers, non-linearities, in particular third-order intermodulation products lead to in-band signal distorti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e3512704def95f69117a3bbfd19c39
https://doi.org/10.1109/led.2020.2980841
https://doi.org/10.1109/led.2020.2980841
Autor:
Matthew Guidry, Umesh K. Mishra, Athith Krishna, Nirupam Hatui, Brian Romanczyk, Haoran Li, Stacia Keller, Xun Zheng, Elaheh Ahmadi, Christian Wurm
Publikováno v:
IEEE Electron Device Letters. 41:349-352
This letter reports on the improvement of the large-signal W-band power performance of nitrogen-polar gallium nitride deep recess high electron mobility transistors with the addition of a 40-nm-thick ex-situ silicon nitride passivation layer deposite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25e473f4fd00ea33a9da586fd172a2c6
https://doi.org/10.1109/led.2020.2967034
https://doi.org/10.1109/led.2020.2967034
Autor:
Chirag Gupta, Nirupam Hatui, Aditya Raj, Stacia Keller, Athith Krishna, Raina Jang, Umesh K. Mishra
Publikováno v:
IEEE Electron Device Letters. 41:220-223
In this letter, we report on the demonstration of a Mg-doped GaN/Al0.2Ga0.8N superlattice (SL) based depletion mode p-channel FinFET to improve the on current (ION). A two-step approach involving a dry etch followed by a Tetramethylammonium hydroxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a2a3f6f31383c1451fe0614fa6f8d7
https://doi.org/10.1109/led.2019.2963428
https://doi.org/10.1109/led.2019.2963428
Autor:
Athith Krishna, Stacia Keller, Subhajit Mohanty, Zhe (Ashley) Jian, Elaheh Ahmadi, Christopher J. Clymore
Publikováno v:
Semiconductor Science and Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad19a1d7dfe6345dab45a866c295b13f
https://doi.org/10.1088/1361-6641/abe21c
https://doi.org/10.1088/1361-6641/abe21c
Autor:
Stacia Keller, Christian Wurm, Rohit R. Karnaty, Nirupam Hatui, Matthew Guidry, Shubhra S. Pasayat, Pawana Shrestha, Umesh K. Mishra, Brian Romanczyk, James F. Buckwalter, Athith Krishna
Publikováno v:
DRC
N-polar GaN MISHEMTs have recently demonstrated excellent power performance and power-added efficiency at 94 GHz [1] . At mm-wave frequencies and high data rates, the linearity of an RF transistor is an important requisite. Third-order non-linearitie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240361c763a5ba11809940e0462b8b1b
https://doi.org/10.1109/drc50226.2020.9135169
https://doi.org/10.1109/drc50226.2020.9135169
Publikováno v:
Applied Physics Letters. 120:132104
This study experimentally shows the existence of acceptor traps at positive polarization interfaces (PPIs) acting as the source of holes in N-polar p-type modulation doped GaN/(AlN/AlGaN) superlattices (SLs) with low Mg doping. The observation of mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1103342ff710a49fa2fda65e79fc8b4d
https://doi.org/10.1063/5.0083790
https://doi.org/10.1063/5.0083790
In this study the MOCVD growth and electrical properties of N-polar modulation doped p-AlGaN/GaN superlattices (SLs) were investigated. Hole sheet charge density and mobility were studied as a function of the concentration of the p-type dopant Mg in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efbc2bdf8973de37c4726d92f8a85d6a
http://arxiv.org/abs/1910.06421
http://arxiv.org/abs/1910.06421
