Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ateeq Nasir"'
Autor:
Tzu-Kan Hsiao, Antonio Rubino, Yousun Chung, Seok-Kyun Son, Hangtian Hou, Jorge Pedrós, Ateeq Nasir, Gabriel Éthier-Majcher, Megan J. Stanley, Richard T. Phillips, Thomas A. Mitchell, Jonathan P. Griffiths, Ian Farrer, David A. Ritchie, Christopher J. B. Ford
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or fibre coupled quantum transfer. Here, the authors demonstrate acoustically-driven single photons from single electrons, without the need for self-as
Externí odkaz:
https://doaj.org/article/778c0d63f08c4a938a952d6f76ebe0b7
Autor:
Lorenzetti, Lara, Alam, Chaudhary Mohd Parvez, Namey, Emily, Monj, Claude, Tsegaye, Ademe, Ateeq, Nasir, Massom, Douglas Mbang, McLain, Grace, Tsanga, Soterine, Mcintosh, Ross
Publikováno v:
BMC Public Health; 9/17/2024, Vol. 24 Issue 1, p1-13, 13p
Autor:
Ian Farrer, Jorge Pedrós, C. J. B. Ford, Yousun Chung, Antonio Rubino, J. Griffiths, Ateeq Nasir, Thomas A. Mitchell, Richard T. Phillips, Seok-Kyun Son, Megan Stanley, David A. Ritchie, Tzu-Kan Hsiao, Hangtian Hou, Gabriel Ethier-Majcher
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
The long-distance quantum transfer between electron-spin qubits in semiconductors is important for realising large-scale quantum computing circuits. Electron-spin to photon-polarisation conversion is a promising technology for achieving free-space or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3eff240fef952d5c3372d84bab7ade8d
https://www.repository.cam.ac.uk/handle/1810/317609
https://www.repository.cam.ac.uk/handle/1810/317609
Autor:
Seok-Kyun Son, David A. Ritchie, Yousun Chung, C. J. B. Ford, Tzu-Kan Hsiao, Antonio Rubino, Ian Farrer, J. Griffiths, Ateeq Nasir, Hangtian Hou
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fd461a16d5da5f8866c022f835ca6cf
Autor:
C. J. B. Ford, David A. Ritchie, John P. Griffiths, Tzu-Kan Hsiao, Girish Rughoobur, Ian Farrer, Yousun Chung, Andrew J. Flewitt, Ateeq Nasir, Hangtian Hou
In a model of a gate-patterned quantum device it is important to choose the correct electrostatic boundary conditions (BCs) in order to match experiment. In this study, we model gated-patterned devices in doped and undoped GaAs heterostructures for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d647fbd311f587d65af8bf6c552071c
Autor:
Ateeq Nasir, Amalia Patanè, Armando Rastelli, Laurence Eaves, Michael W. Fay, Oleg Makarovsky, Santosh Kumar, R. P. Campion, Oliver G. Schmidt
Publikováno v:
Physical Review B. 85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::518938d401e649309c7f27a52ca99442
https://doi.org/10.1103/physrevb.85.195317
https://doi.org/10.1103/physrevb.85.195317
Autor:
R. P. Campion, Armando Rastelli, Laurence Eaves, C. T. Foxon, Michael W. Fay, Ateeq Nasir, Oleg Makarovsky, Amalia Patanè
Publikováno v:
Journal of Physics: Conference Series. 326:012055
Using a focused laser beam, nanoscale current channels and nanoscale light emitting diodes (LEDs) have been made by the controlled thermal diffusion of manganese interstitial ions (Mri) out of a semiconductor heterostructure containing a layer of p-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88e6be347236783bb78b54906b8da393
https://doi.org/10.1088/1742-6596/326/1/012055
https://doi.org/10.1088/1742-6596/326/1/012055
Autor:
Francesca Intonti, Armando Rastelli, R. P. Campion, Massimo Gurioli, Oliver G. Schmidt, Vitantonio Matarazzo, Oleg Makarovsky, Santosh Kumar, Amalia Patanè, Ateeq Nasir
Publikováno v:
Applied Physics Letters. 98:183102
We report a postfabrication process for the realization of nanosized light emitting diodes. The method is based on the exposure of the device to an Ar+ laser through an aperture near field optical microscope and can produce a large (>100 fold) increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::056158924a7e9d2ec41eadd028fa525a
https://doi.org/10.1063/1.3582614
https://doi.org/10.1063/1.3582614