Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Atanu K. Saha"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 115-122 (2021)
We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging te
Externí odkaz:
https://doaj.org/article/8d5320a5456d46949f03d62dcfe93918
Autor:
Jaydeep P. Kulkarni, Siddhartha Raman Sundara Raman, Sumeet Kumar Gupta, Atanu K. Saha, S. S. Teja Nibhanupudi
Publikováno v:
IEEE Transactions on Electron Devices. 68:6132-6138
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 115-122 (2021)
We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to their low power switching characteristics compared to other emerging te
Computing in-memory (CiM) has emerged as an attractive technique to mitigate the von-Neumann bottleneck. Current digital CiM approaches for in-memory operands are based on multi-wordline assertion for computing bit-wise Boolean functions and arithmet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c39ae175df1d89b55889468b5f57f244
http://arxiv.org/abs/2201.01509
http://arxiv.org/abs/2201.01509
Autor:
Peide D. Ye, Yuqin Duan, Gang Qiu, Shengjie Gao, Atanu K. Saha, Chang Niu, Mengwei Si, Jie Jian, Haiyan Wang, Wenzhuo Wu, Jing-Kai Qin, Sumeet Kumar Gupta
Publikováno v:
Nature Electronics. 2:580-586
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile
Autor:
Atanu K. Saha, Sumeet Kumar Gupta
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, we analyze the multi-domain (MD) ferroelectric FET (FEFET) as a non-hysteretic transistor with enhanced gate control for standard logic applications. We consider two regimes of operation i.e., when the ferroelectric (FE) layer acts as
Autor:
Wenzhuo Wu, Petro Maksymovych, Nina Balke Wisinger, Sabine M. Neumayer, Sumeet Kumar Gupta, Mengwei Si, Peide D. Ye, Jing-Kai Qin, Pai-Ying Liao, Atanu K. Saha, Jie Jian, Haiyan Wang, Shengjie Gao
Publikováno v:
ACS Nano. 13:8760-8765
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC
Autor:
Sandeep Krishna Thirumala, Atanu K. Saha, Niharika Thakuria, Byunghoo Jung, Sumeet Kumar Gupta
Publikováno v:
IEEE Transactions on Electron Devices. 66:2415-2423
We propose the application of ferroelectric (FE)-based transistors, viz., negative capacitance FET (NCFET) and Hysteretic ferroelectric FET (FEFET) in the design of coupled oscillators. The proposed oscillator utilizes hysteretic inverter voltage tra
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We present a phase-field simulation framework for ferroelectric (FE)-FET which captures multi-domain effects by self-consistently solving 2D time-dependent Ginzburg-Landau (TDGL), Poisson's, and semiconductor charge/transport equations. Using our pha
In this work, we theoretically and experimentally investigate the working principle and nonvolatile memory (NVM) functionality of a 2D α-In2Se3-based ferroelectric-semiconductor-metal-junction (FeSMJ). First, we analyze the semiconducting and ferroe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::267be630aaaf1fddecd679ebff5f4ab1
http://arxiv.org/abs/2007.02752
http://arxiv.org/abs/2007.02752