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Publikováno v:
Composites Part B: Engineering. 174:106987
In this work, AuPd/n-GaAs and Ag/n-GaAs metal–semiconductor structures, which is known as Schottky Junction Structures (SJSs), with various ZnO thin film thickness (25–250 nm) classified as Group AuPd and Group Ag were produced to investigate ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d103dfc78ff8318b8c474fbe624811e7
https://doi.org/10.1016/j.compositesb.2019.106987
https://doi.org/10.1016/j.compositesb.2019.106987
