Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Aswathi R Nair"'
Publikováno v:
Materials Research Express, Vol 11, Iss 1, p 016403 (2024)
Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying eleme
Externí odkaz:
https://doaj.org/article/0a546289854a4536b8d161b8ff92a619
Autor:
Aswathi R. Nair, B. Anand
Publikováno v:
Central Bank Review, Vol 20, Iss 3, Pp 133-142 (2020)
After the global financial crisis, it was observed that price stability alone would not ensure financial stability. The new paradigm indeed insists on the inclusion of financial stability as an additional macroeconomic objective. In this context, it
Externí odkaz:
https://doaj.org/article/a2aa5468098e486c9a937ce7dd4bb4fa
Publikováno v:
Energy Economics. 122:106703
Publikováno v:
2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT).
Autor:
Aswathi R Nair, Sanjiv Sambandan
Publikováno v:
2022 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS).
Publikováno v:
Flexible and Printed Electronics. 7:035004
In this work we present analytical models for the drain current and threshold voltage of zinc oxynitride thin film transistors. A surface potential based modeling approach has been adopted and the exact closed form solutions for the potential profile
Autor:
E Govindaraj, Aswathi R. Nair
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9789811024702
In this paper, the spectrum holes in licensed frequency bands are utilized for satisfying quality-of-service (QoS) demands of cognitive users. The available spectrum holes are classified as white, gray, and black. The bands are then fairly allocated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33e91898dc45fd994e0cdd4611794f61
https://doi.org/10.1007/978-981-10-2471-9_29
https://doi.org/10.1007/978-981-10-2471-9_29