Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Astrid Gollhardt"'
Autor:
Martin Schneider-Ramelow, Hans Walter, T. Fritzsch, Aleksander Keller, Astrid Gollhardt, Markus Woehrmann, Klaus-Dieter Lang, Michael Schiffer
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Fan-Out enables new heterogeneous packaging concepts where chips are embedded in an electronic mold compound (EMC) package with ultra-small footprint. These multi-chip systems demand a high routing density in the redistribution layer (RDL) which is r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454d0f7b138ec38d3e1e181b8a4e575d
https://doi.org/10.1109/ectc32862.2020.00146
https://doi.org/10.1109/ectc32862.2020.00146
Autor:
Jens W. Tomm, Martin Hempel, Shabnam Dadgostar, Robert Kernke, Juan Jiménez, Astrid Gollhardt
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 16:2100527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ddfd220792e32533fc3ad251ad03e85
https://doi.org/10.1002/pssr.202100527
https://doi.org/10.1002/pssr.202100527
Autor:
Tanja Braun, Astrid Gollhardt, Bruno Michel, Christine Kallmayer, Hans Walter, Bernhard Wunderle, Herbert Reichl
Publikováno v:
Microsystem Technologies. 15:3-15
This paper addresses the reliability of flip-chip on flex (FCOF) assemblies glued with an Ag-particle filled anisotropic conductive adhesive (ACA). As the description of FCOF failure gives still much scope for speculation, a physics of failure based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::815c12e90e0781e2a3efc05d69c77773
https://doi.org/10.1007/s00542-008-0701-5
https://doi.org/10.1007/s00542-008-0701-5
Autor:
J. Keller, Astrid Gollhardt, Neus Sabaté, Dietmar Vogel, Carles Cané, J. Marcos, Bruno Michel, I. Grícia
Publikováno v:
Microelectronic Engineering. 84:1783-1787
This paper describes a novel approach of stress measurement based on the combined imaging-milling capabilities of a FIB equipment. This technique consists on the scaling down of two measurement techniques based on stress-relaxation, the slot and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27503281072a40124a702aa21c13fbff
https://doi.org/10.1016/j.mee.2007.01.272
https://doi.org/10.1016/j.mee.2007.01.272
Digital image correlation of nanoscale deformation fields for local stress measurement in thin films
Autor:
Astrid Gollhardt, Dietmar Vogel, Bruno Michel, Isabel Gràcia, J. Marcos, Neus Sabaté, Carles Cané
Publikováno v:
Nanotechnology. 17:5264-5270
In this paper, the application of an in situ stress measurement technique to a silicon nitride thin film deposited onto a thick silicon substrate is presented. The method is based on the measurement of the displacement field originated when a slot is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::539f09f7896594450480f2dc5298732a
https://doi.org/10.1088/0957-4484/17/20/037
https://doi.org/10.1088/0957-4484/17/20/037
Autor:
Neus Sabaté, Bernd Michel, Ellen Auerswald, J. Keller, Astrid Gollhardt, J. Auersperg, Dietmar Vogel
Publikováno v:
Materials Science Forum. :121-126
New challenges for design, manufacturing and packaging of MEMS/NEMS arise from the ongoing miniaturization process. Therefore there is a demand on detailed information on thermo-mechanical material properties of the applied materials. Because of size
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3cc153c321412c360b1dc7493885d31
https://doi.org/10.4028/www.scientific.net/msf.524-525.121
https://doi.org/10.4028/www.scientific.net/msf.524-525.121
Autor:
Neus Sabaté, Joan Ramon Morante, Bruno Michel, Carles Cané, Isabel Gràcia, Dietmar Vogel, Astrid Gollhardt, J. Keller
Publikováno v:
Journal of Micromechanics and Microengineering. 16:254-259
In this paper, the authors present a new approach to residual stress measurement that takes advantage of the combined imaging-milling capabilities of focused ion-beam equipment. The method is based on the measurement of the displacement field origina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac30aecc100a05303f2c3a8647327a0a
https://doi.org/10.1088/0960-1317/16/2/009
https://doi.org/10.1088/0960-1317/16/2/009
Publikováno v:
2011 Semiconductor Conference Dresden.
The paper presents a new measurement method for residual stresses introduced by manufacturing in BEoL structures. Material removal by FIB ion milling is used to release elastically frozen stresses. Normal stress components are calculated from local s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f95a17b60bf77c17d5047012a616550
https://doi.org/10.1109/scd.2011.6068737
https://doi.org/10.1109/scd.2011.6068737
Publikováno v:
3rd Electronics System Integration Technology Conference ESTC.
The paper gives a brief overview on some advanced stress measurement methods, which permit local access to semiconductor or packaging structures with a micrometer scale spatial resolution. Focusing is made on local stress relief, Raman spectroscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd15ef0d9dce6b3d214f0927112cde4d
https://doi.org/10.1109/estc.2010.5643016
https://doi.org/10.1109/estc.2010.5643016
Publikováno v:
EuroSimE 2009 - 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems.
The nanoindentation experiment is an established technique for the determination of Hardness and Young's modulus of thin films. This standard data set is not sufficient to be used as input to finite element simulations, because elastic-plastic materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27a61df43fb47103345e62523bcc3c7b
https://doi.org/10.1109/esime.2009.4938492
https://doi.org/10.1109/esime.2009.4938492