Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Assaad El Helou"'
Autor:
Sanjoy Kumar Nandi, Sujan Kumar Das, Yubo Cui, Assaad El Helou, Shimul Kanti Nath, Thomas Ratcliff, Peter Raad, Robert G. Elliman
Publikováno v:
ACS Applied Materials & Interfaces. 14:21270-21277
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3db202680eef39e0d7b1a5eecac8d85
https://doi.org/10.1021/acsami.2c04618
https://doi.org/10.1021/acsami.2c04618
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:240-251
A compact 3D thermal model is developed for the quick and accurate thermal characterization of self-heating in Back-End-of-Line (BEoL) interconnect network for reliability assessment. The model offers a more accurate thermal tool compared to the curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d804e1ffc970b0fa0385ce0285144b
https://doi.org/10.1109/tdmr.2021.3066385
https://doi.org/10.1109/tdmr.2021.3066385
Autor:
Tatyana I. Feygelson, Peter E. Raad, Assaad El Helou, Pavel L. Komarov, Marko J. Tadjer, Travis J. Anderson, Daniel A. Francis, Bradford B. Pate, Karl D. Hobart
Publikováno v:
IEEE Transactions on Electron Devices. 67:5415-5420
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging self-heating. In this study, self-heating in AlGaN/GaN HEMTs on high conductivity substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37dec06c41b77736217cdda684d38290
https://doi.org/10.1109/ted.2020.3028557
https://doi.org/10.1109/ted.2020.3028557
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:1010-1019
The back-end components of integrated circuits (ICs) are susceptible to self-heating deteriorating effects due to the microscale interconnects carrying large current densities, and thus require innovative passive cooling strategies. This article inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d775720e576c4439a88e7fac9da212d
https://doi.org/10.1109/tcpmt.2020.2974793
https://doi.org/10.1109/tcpmt.2020.2974793
Publikováno v:
Analytical Chemistry. 91:12492-12500
Alternating current electrothermal flow (ACET) induced by Joule heating is utilized to transport biologically relevant liquids in microchannels using simple electrode designs. However, Joule heating may cause significant temperature rises, which can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f1200614f635d17961911d3f7c2859a
https://doi.org/10.1021/acs.analchem.9b03238
https://doi.org/10.1021/acs.analchem.9b03238
Publikováno v:
ECS Transactions. 89:11-16
GaN HEMT devices with source-connected field-plates are characterized thermally to quantify their performance. A Thermoreflectance approach is used to obtain surface temperature maps of the unobstructed GaN junction areas. Different temperature behav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d2faafac044451d5cebc74637929b8c
https://doi.org/10.1149/08905.0011ecst
https://doi.org/10.1149/08905.0011ecst
Publikováno v:
2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
Gallium Nitride (GaN) based high-power devices require advance thermal analysis to ensure that the operating temperature is kept within a reliable range. High conductivity substrates such as Silicon Carbide (SiC) are used instead of Silicon (Si) to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76a13ca9690f6098cc042ef870f0f66
https://doi.org/10.1109/itherm45881.2020.9190471
https://doi.org/10.1109/itherm45881.2020.9190471
Autor:
Assaad El-Helou, Robert Elliman, Shimul Kanti Nath, Peter E. Raad, Thomas Ratcliff, Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li
Publikováno v:
Physical Review Applied. 13
The negative-differential-resistance (NDR) response of $\mathrm{Nb}$/${\mathrm{Nb}\mathrm{O}}_{x}$/$\mathrm{Pt}$ cross-point devices is shown to have a polarity dependence due to the effect of the metal-oxide Schottky barriers on the contact resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a925f9613a321c60bd44325d0b95235c
https://doi.org/10.1103/physrevapplied.13.064024
https://doi.org/10.1103/physrevapplied.13.064024
Autor:
Sanjoy Kumar Nandi, Robert Elliman, Mutsunori Uenuma, Assaad El-Helou, Thomas Ratcliff, Shuai Li, Shimul Kanti Nath, Peter E. Raad
Publikováno v:
ACS applied materialsinterfaces. 12(7)
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution of conduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bae42ac969f9d63a465765ed8474bc7
https://pubmed.ncbi.nlm.nih.gov/31989818
https://pubmed.ncbi.nlm.nih.gov/31989818
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
This work analyzes the thermal characteristics of CMP square pattern layers and the added cooling effectiveness for activated interconnects in a multi-layered BEOL stack. An equivalent thermal resistive analysis is used to obtain the effective in-pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc48f4192ab843a6a5d1de092e6ee8ec
https://doi.org/10.1109/ectc.2019.00068
https://doi.org/10.1109/ectc.2019.00068