Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy

Autor: Mäkinen, J., Laine, T., Partanen, Jatta, Saarinen, K., Hautojärvi, Pekka, Tappura, Kirsi, Hakkarainen, Timo, Asonen, Harri, Pessa, Markus, Kauppinen, J., Vänttinen, K., Paalanen, M., Likonen, Jari

Publikováno v: Mäkinen, J, Laine, T, Partanen, J, Saarinen, K, Hautojärvi, P, Tappura, K, Hakkarainen, T, Asonen, H, Pessa, M, Kauppinen, J, Vänttinen, K, Paalanen, M & Likonen, J 1996, ' Donor levels and the microscopic structure of the DX center in n-type Si-doped Al x Ga 0.51-x In 0.49 P grown by molecular-beam epitaxy ', Physical Review B: Condensed Matter, vol. 53, no. 12, pp. 7851-7862 . https://doi.org/10.1103/PhysRevB.53.7851

We have investigated donor levels and the local structure of DX centers in Si-doped AlxGa0.51−xIn0.49P grown by gas-source molecular-beam epitaxy. In a ternary alloy Ga0.51In0.49P, Si donors form only shallow donor states. In contrast, in quaternar

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