Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Asneil, A."'
Autor:
Ade Asneil Akbar, Chuhei Oshima, Takashi Ogawa, Toyosei Kawasaki, Hiroshi Kishimoto, Takashi Ichimura
Publikováno v:
Scopus-Elsevier
Using STM, we have directly confirmed the incommensurate stacking of double atomic layers of graphene and monolayer h-BN on Ni(111). The formation of a graphene layer weakens the interfacial interaction between monolayer h-BN and Ni(111), resulting i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8294c358fcfae4e9bc8203158dc436b2
https://doi.org/10.1142/s0218625x02003883
https://doi.org/10.1142/s0218625x02003883
Autor:
Chuhei Oshima, Daisuke Sakai, Ade Asneil Akbar, Takashi Ogawa, Hiroshi Kishimoto, Toyosei Kawasaki
Publikováno v:
Surface and Interface Analysis. 31:126-130
The atomic-scale processes of benzene adsorption and desorption on an Si(111)-7 × 7 surface have been investigated with scanning tunnelling microscopy. Analysis of the atomic-scale images obtained during the adsorption and desorption processes yield
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de3a3dbbe68d654b6dfd60befa47ae6b
https://doi.org/10.1002/sia.967
https://doi.org/10.1002/sia.967
Autor:
Motoshu Miyajima, Tetsuya Shirasu, Takahiro Kimura, Akbar Ade Asneil, Tomoji Nakamura, Naoki Idani, Tsuyoshi Kanki, Sakamoto Manabu, Satoshi Takesako
Publikováno v:
2008 International Interconnect Technology Conference.
In order to achieve high throughput Cu-CMP compatible with low step heights in 32nm Node copper interconnect technologies and beyond, we believe it is crucial a passivation layer on the Cu surface in the slurry during the CMP process. We show that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b8ef51e5a6098e4d457ce43e05c1883
https://doi.org/10.1109/iitc.2008.4546931
https://doi.org/10.1109/iitc.2008.4546931
Autor:
H. Iwata, Masafumi Nakaishi, Tomoji Nakamura, Hiroshi Kudo, Y. Mizushima, S. Akiyama, Yoshihisa Iba, Toshiro Futatsugi, Toshihiro Sugii, Takayuki Ohba, T. Kouno, Yoshihiro Nakata, M. Hayashi, Ade Asneil Akbar, A. Tsukune, Kenji Ishikawa, S. Ozaki
Publikováno v:
2008 International Interconnect Technology Conference.
Via cleaning using gas-phase organic acid has a high potential for improving the reduction capability of copper oxides (CuO), not degrading porous ultra-low-k dielectrics, and reducing processing cost. We applied our via cleaning technique to interme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db812339353eb223815a72c40533d2d
https://doi.org/10.1109/iitc.2008.4546935
https://doi.org/10.1109/iitc.2008.4546935
Autor:
K. Sukegawa, T. Yamamoto, H. Kudo, T. Kubo, T. Sukegawa, H. Ehara, H. Ochmizu, M. Fukuda, Y. Mizushima, Y. Shimoda, M. Tajima, M. Oryoji, Y. Nakata, H. Watatani, H. Sakai, A. Asneil, S. Sakai, H. Matsuyama, H. Kurata, A. Tsukune, N. Shimizu, T. Futatsugi, S. Satoh, M. Kase, T. Sugii
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We present a 45 nm LSTP platform featuring a low-leakage/low-cost transistor and full-NCS/dual damascene Cu interconnects. By applying "MSA + spike-RTA" to annealing process, Ion at Vd=1.2 V are 0.54 mA/um at Ioff=40 pA/mum for nMOS and 0.22mA/um at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e583977bf530adee7a8d50afcf61ef9a
https://doi.org/10.1109/vlsit.2007.4339681
https://doi.org/10.1109/vlsit.2007.4339681
Autor:
H. Kudo, H. Ochimizu, A. Tsukune, S. Okano, K. Naitou, M. Sakamoto, S. Takesako, T. Shirasu, A. Asneil, N. Idani, K. Sugimoto, S. Ozaki, Y. Nakata, T. Owada, H. Watatani, N. Ohara, N. Ohtsuka, M. Sunayama, H. Sakai, M. Oryoji, S. Akiyama, H. Iwata, H. Yamamoto, Y. Shimoda, T. Yao, S. Suda, T. Suzuki, S. Sakai, H. Kitada, S. Amari, T. Tabira, A. Matsuura, Y. Iba, Y. Mizushima, H. Matsuyama, Y. Suzuki, N. Shimizu, K. Yanai, M. Nakaishi, T. Futatsugi, I. Hanyu, T. Nakamura, T. Sugii
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
According to the 45 nm BEOL technology node, we demonstrated that a homogeneous interlayer dielectric with dielectric constant of 2.25 has a substantial advantage in terms of RC delay reduction compared to other potential architectures such as hybrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc515f4282a614208a6ef70fe371167
https://doi.org/10.1109/iitc.2007.382383
https://doi.org/10.1109/iitc.2007.382383
Autor:
Kawasaki, Toyosei, Ichimura, Takashi, Kishimoto, Hiroshi, Akbar, Ade Asneil, Ogawa, Takashi, Oshima, Chuhei
Publikováno v:
Surface Review & Letters; Jun/Aug2002, Vol. 9 Issue 3/4, p1459, 6p
Autor:
Kawasaki, Toyosei, Sakai, Daisuke, Kishimoto, Hiroshi, Akbar, Ade Asneil, Ogawa, Takashi, Oshima, Chuhei
Publikováno v:
Surface & Interface Analysis: SIA; 2001, Vol. 31 Issue 2, p126-130, 5p
Autor:
Kanki, T., Shirasu, T., Takesako, S., Sakamoto, M., Asneil, Akbar Ade, Idani, N., Kimura, T., Nakamura, T., Miyajima, M.
Publikováno v:
2008 International Interconnect Technology Conference; 2008, p79-81, 3p
Autor:
Kudo, H., Ochimizu, H., Tsukune, A., Okano, S., Naitou, K., Sakamoto, M., Takesako, S., Shirasu, T., Asneil, A., Idani, N., Sugimoto, K., Ozaki, S., Nakata, Y., Owada, T., Watatani, H., Ohara, N., Ohtsuka, N., Sunayama, M., Sakai, H., Tabira, T.
Publikováno v:
2007 IEEE International Interconnect Technology Conference; 2007, p178-180, 3p