Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Asmaa Leila Sabeha Hassein-Bey"'
Autor:
Mohamed El-Amine Benamar, Asmaa Leila Sabeha Hassein-Bey, Burhanuddin Yeop Majlis, Nadir Belgroune, Rafik Serhane, A. Tahraoui, Abdelkader Hassein-bey
Publikováno v:
Microsystem Technologies. 23:1275-1284
An electrical response of a microflow sensor would open a wide horizon of uses and should intensify the integration of MEMS (Micro-Electro-Mechanical-System) microfluidic-based LOC (Lab-On-Chip). This paper presents an original microflow sensor which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4cce6493f053373357f733de7eb307
https://doi.org/10.1007/s00542-016-2891-6
https://doi.org/10.1007/s00542-016-2891-6
Autor:
S. Lafane, Mohamed El-Amine Benamar, Ahdelkader Hassein-Bey, Asmaa Leila Sabeha Hassein-Bey, Hakim Tahi, S. Abdelli-Messaci
Publikováno v:
2018 IEEE International Conference on Semiconductor Electronics (ICSE).
Vanadium dioxide (VO 2 ) exhibits a metal-insulator transition (MIT) near 68°C with a unique sharp resistivity change. Below this temperature, it behaves as a semiconductor with a high electrical resistivity, above it the material behaves as a metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d770fe171092d673acf42364688226d
https://doi.org/10.1109/smelec.2018.8481217
https://doi.org/10.1109/smelec.2018.8481217
Autor:
Asmaa Leila Sabeha Hassein-Bey, Amina Zouina Ait Djafer, Hakim Tahi, Abdelkader Hassein-Bey, S. Lafane, Nadir Belgroune
Publikováno v:
2016 IEEE International Conference on Semiconductor Electronics (ICSE).
This paper concerns, the comparative study of the effect of silicon and gold substrates on the electrical properties of vanadium dioxide thin films (VO 2 ) for memristor applications. The VO 2 thin films were deposited by (PLD) method, directly on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0745d8f9e0c11df2a72d1df2fe15831
https://doi.org/10.1109/smelec.2016.7573636
https://doi.org/10.1109/smelec.2016.7573636