Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Asim M. Murshid"'
Autor:
Hussein Mohammed Essa, Asim M. Murshid
Publikováno v:
Al-Kitab Journal for Pure Sciences, Vol 7, Iss 01 (2023)
The field of image processing has been revolutionized by Convolutional Neural Networks (CNNs), which exhibit exceptional capability in feature extraction and accurate image classification. However, training CNNs requires large volumes of annotated da
Externí odkaz:
https://doaj.org/article/f04c142731504194a3cc8a482fcc8787
Autor:
Faisal Bashir, Asim M. Murshid
Publikováno v:
Frequenz. 76:1-7
In this work, we demonstrate a ground plane (GP) based Selective Buried Oxide (SELBOX) Junctionless Transistor (JLT), named as GP-SELBOX-JLT. The use of GP and SELBOX in the proposed device reduces the electric field and enhances volume depletion in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b226b2ba6c18284b1cf299cda12824
https://doi.org/10.1515/freq-2021-0059
https://doi.org/10.1515/freq-2021-0059
Autor:
Asim M. Murshid
Publikováno v:
Kirkuk Journal of Science, Vol 10, Iss 3, Pp 79-91 (2015)
The output of fuzzification process, a fuzzy data, is unsuitable for real time applications and needs to be converted into a crisp value. The process of defuzzification is very important and has a significant impact on the overall performance of a fu
Externí odkaz:
https://doaj.org/article/819c6edf592441b7979a2b093930cb21
Autor:
Ali Abdulrahman Safar, Asim M. Murshid
Publikováno v:
2022 International Symposium on Multidisciplinary Studies and Innovative Technologies (ISMSIT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9cccbd564ac6515e54b4539581f43e
https://doi.org/10.1109/ismsit56059.2022.9932759
https://doi.org/10.1109/ismsit56059.2022.9932759
Publikováno v:
IET Circuits, Devices & Systems. 14:1058-1064
In this work, the authors demonstrate the realisation of metal controlled (MC) dopingless (DL) metal oxide semiconductor field-effect transistor (MOSFET) on a selective buried oxide (SELBOX). The different doped regions of the proposed device, such a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f92730665db546e5b9fe1d9dee0e957
https://doi.org/10.1049/iet-cds.2020.0273
https://doi.org/10.1049/iet-cds.2020.0273
Autor:
Asim M. Murshid
Publikováno v:
Kirkuk Journal of Science, Vol 3, Iss 2, Pp 70-87 (2008)
The simple abstract we can talk about in this project is about the idea of information security has became very important thing in our life, so we can not depend only on data or information encryption but hiding it too which is called (Steganography)
Externí odkaz:
https://doaj.org/article/041d4cfc70644fb3a469521791d4a3fa
Publikováno v:
Journal of Engineering Science and Technology Review, Vol 9, Iss 2, Pp 50-58 (2016)
The matrix converter (MC) with direct torque control (DTC) combination is efficient way to get better performance specifications in the industry. The MC and the DTC advantages are combined together. The reduction of complexity and cost of DC link in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::079a066b87363f79ade0d327bca8c3a5
http://www.jestr.org/downloads/Volume9Issue2/fulltext9922016.pdf
http://www.jestr.org/downloads/Volume9Issue2/fulltext9922016.pdf
Publikováno v:
2017 14th IEEE India Council International Conference (INDICON).
In this work a hybrid doped p type MOSFET is proposed. The structure has two gates, a main gate (MG) and a side gate (SG). The main gate controls channel conductivity of the transistor similar to the conventional MOSFET gate electrode while the side
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491459b66b111b9ffeebcd76aa561177
https://doi.org/10.1109/indicon.2017.8487971
https://doi.org/10.1109/indicon.2017.8487971
Publikováno v:
2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT).
In this work, we propose and simulate two new folded cascode operational transconductance amplifiers (FC-OTAs). The novelty of the proposed OTAs is the use of carbon nanotube field effect transistors (CNT-FET) in their design. The two proposed OTAs i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25411d6bcdaf3981f169254bd15dd04e
https://doi.org/10.1109/mspct.2017.8363968
https://doi.org/10.1109/mspct.2017.8363968
Publikováno v:
2017 9th IEEE-GCC Conference and Exhibition (GCCCE).
In this work we propose and simulate a polarization engineered enhancement mode current aperture vertical electron transistor (P-CAVET). The novelty of the proposed structure lies in using polarization engineering to achieve enhancement mode operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4f2bec1707d834d533a8fdf7684cb22
https://doi.org/10.1109/ieeegcc.2017.8447991
https://doi.org/10.1109/ieeegcc.2017.8447991