Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Ashwyn Srinivasan"'
Autor:
Artemisia Tsiara, Alicja Lesniewska, Philippe Roussel, Srinivasan Ashwyn Srinivasan, Mathias Berciano, Marko Simicic, Marianna Pantouvaki, Joris Van Campenhout, Kristof Croes
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Samantha Lubaba Noor, Kristiaan De Greve, Pol Van Dorpe, Azad Naeemi, Christian Haffner, Francky Catthoor, Ashwyn Srinivasan, Dennis Lin
Publikováno v:
2021 IEEE Photonics Conference (IPC).
This work studies the performance of a Ge-based plasmonic detector with carrier mobility and lifetime variation. The performance is evaluated in terms of the detector's dark current, photocurrent, and detection bandwidth.
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:084003
Autor:
Davide Guermandi, S. Van Huylenbroeck, Peter Verheyen, P. De Heyn, Ashwyn Srinivasan, Caroline Demeurisse, Julien Bertheau, Andy Miller, M. Pantouvaki, S. Lardenois, P. Nolmans, Michal Rakowski, Kenneth June Rebibis, S. Balakrishnan, Y. Ban, Xiao Sun, Philippe Absil, Nicolas Pantano, Junwen He, Pieter Bex, Alain Phommahaxay, J. De Coster, J. Van Campenhout, L. Bogaerts, Dimitrios Velenis
Publikováno v:
45th European Conference on Optical Communication (ECOC 2019).
Publikováno v:
ECS Meeting Abstracts. :1103-1103
Owing to its compatibility with mainstream Si technologies and remarkable physical properties, Ge has become a key enabler of modern semiconductor devices. In the past decades, the element has been introduced in various application areas such as high
Autor:
Yoojin Ban, Xiao Sun, Kenneth June Rebibis, L. Bogaerts, Michal Rakowski, Nicolas Pantano, Philippe Absil, Dimitrios Velenis, J. Van Campenhout, S. Lardenois, S. Balakrishnan, J. De Coster, S. Van Huylenbroeck, Caroline Demeurisse, Pieter Bex, Andy Miller, Bradley Snyder, M. Pantouvaki, P. Nolmans, P. De Heyn, Fumihiro Inoue, Ashwyn Srinivasan, Peter Verheyen
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We demonstrate a microbump flip-chip integrated 14nm-FinFET CMOS-Silicon Photonics (SiPh) technology platform enabling ultra-low power Optical I/O transceivers with 1.6Tb/s/mm2 bandwidth density. The transmitter combines a differential FinFET driver
Autor:
Joris Van Kerrebrouck, Joris Lambrecht, Joris Van Campenhout, Guy Torfs, Jochem Verbist, Ashwyn Srinivasan, Johan Bauwelinck, Xin Yin, Peter De Heyn, Michiel Verplaetse, Timothy De Keulenaer, Gunther Roelkens
Publikováno v:
Journal of Lightwave Technology
JOURNAL OF LIGHTWAVE TECHNOLOGY
JOURNAL OF LIGHTWAVE TECHNOLOGY
Four-level pulse amplitude modulation (PAM-4) is widely regarded as the modulation format of choice for the next generation of 400 gigabit Ethernet short-reach optical transceiver. However, generating and receiving PAM-4 at line rates of 112 Gb/s has
Autor:
Andy Miller, S. Balakrishnan, Sofie Janssen, S. Lardenois, A. Lesniewska, Guy Lepage, Kristof Croes, Joris Van Campenhout, Brad Snyder, Philippe Absil, Ashwyn Srinivasan, Yoojin Ban, Peter Verheyen, Marianna Pantouvaki, Peter De Heyn, Negin Golshani, Jeroen De Coster
Publikováno v:
OFC
Scopus-Elsevier
Optical Fiber Communication Conference
Scopus-Elsevier
Optical Fiber Communication Conference
We discuss recent progress in the performance of modulators and photodetectors co-integrated in a silicon photonics platform, and capable of operation in the O-band or C-band at 56Gb/s single-lane NRZ data rates and beyond.
Autor:
Alireza Samani, Joris Van Campenhout, Ashwyn Srinivasan, Mohammed Y. S. Sowailem, Mohamed Osman, David V. Plant, Marianna Pantouvaki, Peter De Heyn, Eslam El-Fiky
Publikováno v:
OFC
We demonstrate 112 Gb/s 4-level pulse amplitude modulation over 2 km of SMF using a C-band GeSi electro-absorption modulator for data-center interconnects. Also, we present first results towards 400 Gb/s wavelength division multiplexed transmission.
Autor:
Michiel Verplaetse, Gunther Roelkens, Joris Van Campenhout, Guy Torfs, Arno Vyncke, Srinvasan Ashwyn Srinivasan, Peter De Heyn, Michael Vanhoecke, Xin Yin, Timothy De Keulenaer, Joris Lambrecht, Jochem Verbist
Publikováno v:
ECOC
Using two $120\ \mu m$ long, binary driven GeSi electro-absorption modulators in parallel and an in-house developed electrical transceiver chipset, we demonstrate the first real-time transmission of 128 Gb/s PAM-4 over 1 km fiber without requiring an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05b796ac66e029e06f4a539b03fec658
https://hdl.handle.net/1854/LU-8581884
https://hdl.handle.net/1854/LU-8581884