Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ashwini S. Gajarushi"'
Autor:
Vijay Palaparthy, V. Ramgopal Rao, Tapanendu Kundu, Maryam Shojaei Baghini, Sandeep G. Surya, Ashwini S. Gajarushi, Saurabh A. Chandorkar
Publikováno v:
IEEE Sensors Journal. 21:13735-13743
Micro-Electro-Mechanical-System (MEMS) cantilevers are sensitive to minute changes in environmental parameters. MEMS cantilevers possess a single readout transduction mechanism like stress to frequency, resistive and capacitive changes. Here, we demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70c5dc7ce4414ff19dbbfe4fc866263
https://doi.org/10.1109/jsen.2021.3067718
https://doi.org/10.1109/jsen.2021.3067718
Publikováno v:
IEEE Sensors Journal. 20:2938-2944
In this work, Graphene-based field-effect transistors (GFETs) are demonstrated as a highly sensitive dosimeter for gamma radiation. Graphene-based field-effect transistors exhibit p-type doping with the Dirac point shifting in the positive direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882bcb03d528a995474cf64632be66db
https://doi.org/10.1109/jsen.2019.2958143
https://doi.org/10.1109/jsen.2019.2958143
Autor:
Ashwini S. Gajarushi, Rizwan Nabi, V. Ramgopal Rao, Chandramouli Subramaniam, Maheswaran Shanmugam, Mohd Wasim, Gopalan Rajaraman, Srinivasu Kancharlapalli
Publikováno v:
Materials Horizons. 6:743-750
An unprecedented air-stable, n-doped graphene field-effect transistor (GFET) with exceptionally enhanced mobility (500%), and concomitantly increased current density (∼105 A cm−2), using lanthanide macrocyclic complexes [Ln(L1)(NO3)3] (where Ln =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac48c85445d8b8302dd9770376dc2943
https://doi.org/10.1039/c8mh01241e
https://doi.org/10.1039/c8mh01241e
Autor:
Ashwini S. Gajarushi, Sandeep G. Surya, Mangalampalli Ravikanth, Chandramouli Subramaniam, Mrinalini G. Walawalkar, V. Ramgopal Rao
Publikováno v:
The Analyst. 145(3)
The high energy density (4.2 MJ kg−1) and low vapour pressure (7.2 × 10−9 atm) of chemical explosives such as TNT (2,4,6-trinitrotoluene) pose a grave security risk demanding immediate attention. Detection of such hazardous and highly challengin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d375b1db271d31f55dd170587fe49439
https://pubmed.ncbi.nlm.nih.gov/31820747
https://pubmed.ncbi.nlm.nih.gov/31820747
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
In this work, we report the application of graphene field effect transistors (GFETs) as a gamma radiation sensor. The GFETs were irradiated at room temperature by 60Co gamma radiation source for 10 kGy and 20 kGy gamma dose. The Electrical measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d9694f9d05086e814a161ea3f0aa3a7
https://doi.org/10.1109/nmdc.2018.8605850
https://doi.org/10.1109/nmdc.2018.8605850
Publikováno v:
2016 3rd International Conference on Emerging Electronics (ICEE).
In this paper we discuss the effects of x-ray irradiation on monolayer graphene transistor characteristics. We report monolayer graphene field effect transistors (GFETs) under x-ray irradiation with major shift in dirac point on exposure to x-ray irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab1a892a530aa112013560945b50f68f
https://doi.org/10.1109/icemelec.2016.8074586
https://doi.org/10.1109/icemelec.2016.8074586
Autor:
Mangalampalli Ravikanth, Anil Kottantharayil, Ashwini S. Gajarushi, V. Ramgopal Rao, Mrinalini G. Walawalkar, Dawuth Pathan, Tejas R. Naik
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
The transport properties of back-gated graphene field effect transistors (GFETs) can be tuned via chemical doping. In this study, we report alteration of charge transport properties of GFET via 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f87107e8e74e8379920b4a7286bcf2b
https://doi.org/10.1109/nano.2016.7751514
https://doi.org/10.1109/nano.2016.7751514