Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Ashwin Jayaraman"'
Autor:
Xizhu Zhao, Luke M. Davis, Xiabing Lou, Sang Bok Kim, Soňa Uličná, Ashwin Jayaraman, Chuanxi Yang, Laura T. Schelhas, Roy Gordon
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035144-035144-6 (2021)
Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin film
Externí odkaz:
https://doaj.org/article/d5cc8e172eec4cedac46a733e1f62a58
Publikováno v:
Crystals, Vol 7, Iss 8, p 254 (2017)
Abstract: Mechanical anisotropy in an austenitic ferromagnetic shape memory alloy (SMA), Ni50Mn26.25Ga23.75, is investigated along (010), (120), (121), (231) and (232) using nanoindentation. While (010) exhibits the highest reduced modulus, Er, and h
Externí odkaz:
https://doaj.org/article/d976784e928640268249e01f4728909a
Publikováno v:
Journal of Vacuum Science & Technology A. 40:062402
The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In2(O,S)3, represents one promising material for this application, especially when paired with chalcogenide absorbe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d05732323ec74c4e6df2d044efd8570
https://doi.org/10.1116/6.0001997
https://doi.org/10.1116/6.0001997
Publikováno v:
ACS Applied Materials & Interfaces. 11:45892-45902
The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac7e529ba47ccbf4eb7ead92394b5770
https://doi.org/10.1021/acsami.9b16933
https://doi.org/10.1021/acsami.9b16933
Publikováno v:
ACS Nano. 13:11717-11725
Nanowires have promising applications as photodetectors with superior ability to tune absorption with morphology. Despite their high optical absorption, the quantum efficiencies of these nanowire photodetectors remain low due to difficulties in fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f02dccbd925660537445dabd49b5c069
https://doi.org/10.1021/acsnano.9b05659
https://doi.org/10.1021/acsnano.9b05659
Autor:
Danny Chua, Luke M. Davis, Ashwin Jayaraman, Xizhu Zhao, Sang Bok Kim, Shao-Liang Zheng, Roy G. Gordon, Sunghwan Lee
Publikováno v:
Chemistry – A European Journal. 24:9525-9529
Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In2 O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc608f3bcb92954e7ca2ee84b9044f0
https://doi.org/10.1002/chem.201802317
https://doi.org/10.1002/chem.201802317
Publikováno v:
ACS applied materialsinterfaces. 11(49)
The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5fefafda3d358415c33567ccc0c0c674
https://pubmed.ncbi.nlm.nih.gov/31722176
https://pubmed.ncbi.nlm.nih.gov/31722176
Autor:
Sang Bok Kim, Soňa Uličná, Xizhu Zhao, Roy G. Gordon, Chuanxi Yang, Xiabing Lou, Laura T. Schelhas, Ashwin Jayaraman, Luke M. Davis
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035144-035144-6 (2021)
Tin monosulfide, SnS, absorbs visible light and holds promise for thin-film photovoltaics. However, the optoelectronic properties of this material vary among the different structural phases, and control over the phase of vapor deposited SnS thin film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de30747dedae4334245a226cd73f502c
https://doaj.org/article/d5cc8e172eec4cedac46a733e1f62a58
https://doaj.org/article/d5cc8e172eec4cedac46a733e1f62a58
Autor:
Sang Bok, Kim, Ashwin, Jayaraman, Danny, Chua, Luke M, Davis, Shao-Liang, Zheng, Xizhu, Zhao, Sunghwan, Lee, Roy G, Gordon
Publikováno v:
Chemistry (Weinheim an der Bergstrasse, Germany). 24(38)
Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1eea57edc0a485b201fee0ac15757c1c
https://pubmed.ncbi.nlm.nih.gov/29869812
https://pubmed.ncbi.nlm.nih.gov/29869812
Publikováno v:
Crystals, Vol 7, Iss 8, p 254 (2017)
Crystals; Volume 7; Issue 8; Pages: 254
Crystals; Volume 7; Issue 8; Pages: 254
Mechanical anisotropy in an austenitic ferromagnetic shape memory alloy (SMA), Ni50Mn26.25Ga23.75, is investigated along (010), (1) over bar 20, (1) over bar 21, 23 (1) over bar and (232) using nanoindentation. While (010) exhibits the highest reduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c1ff23248e6e58ff1c9847c463a5c8f
https://igi.indrastra.com/items/show/201181
https://igi.indrastra.com/items/show/201181