Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Ashraful G. Bhuiyan"'
Autor:
A. S. M. Jannatul Islam, Md. Sayed Hasan, Md. Sherajul Islam, Ashraful G. Bhuiyan, Catherine Stampfl, Jeongwon Park
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-17 (2023)
Abstract Crystal deformation mechanisms and mechanical behaviors in semiconductor nanowires (NWs), in particular ZnSe NWs, exhibit a strong orientation dependence. However, very little is known about tensile deformation mechanisms for different cryst
Externí odkaz:
https://doaj.org/article/a588671ce0004008b45466dd59cfcd86
Autor:
Ashraful G. Bhuiyan, Yuta Kamada, Md. Sherajul Islam, Riku Syamoto, Daiki Ishimaru, Akihiro Hashimoto
Publikováno v:
Results in Physics, Vol 20, Iss , Pp 103714- (2021)
GaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in het
Externí odkaz:
https://doaj.org/article/daf391a238f640b7a6b352bb1610cc15
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015053-015053-6 (2020)
The fabrication of high-quality InxAl1−xN alloys over the whole composition is very challenging. Controlling the In/(In + Al) beam flux ratio and the growth temperature, this paper reports the fabrication of single crystalline InxAl1−xN alloys ov
Externí odkaz:
https://doaj.org/article/17f8b94051d64b4b860138aa8d1b2591
Publikováno v:
Current Applied Physics. 20:572-581
We explore the effects of interlayer vacancy defects on the vibrational properties of Bernal (AB) stacking bilayer armchair graphene nanoribbons (BiAGNRs) using the forced vibrational method. It is observed that the Raman active longitudinal optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74605de2e73525b89e4170653ac8ce5a
https://doi.org/10.1016/j.cap.2020.02.006
https://doi.org/10.1016/j.cap.2020.02.006
Publikováno v:
Crystal Growth & Design. 20:1415-1421
This paper presents a growth mechanism and a comparative study of the InN nucleation layers grown on epitaxial graphene (EG) by metal organic vapor phase epitaxy (MOVPE) and radio-frequency molecular beam epitaxy (RF-MBE). Before growing InN nucleati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54c67aea92c0d888ade7d6e8e53422e
https://doi.org/10.1021/acs.cgd.9b00699
https://doi.org/10.1021/acs.cgd.9b00699
Autor:
Yuta Kamada, Riku Syamoto, Ashraful G. Bhuiyan, Akihiro Hashimoto, Md. Sherajul Islam, Daiki Ishimaru
Publikováno v:
Results in Physics, Vol 20, Iss, Pp 103714-(2021)
GaN is proven as the most important modern semiconductor with many potential applications. Although GaN growth is matured enough, unfortunately, it is still very difficult to obtain this material with the same quality as the Si crystal, either in het
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d2958155b2e512723e22f00b9b93fa7
http://www.sciencedirect.com/science/article/pii/S2211379720321306
http://www.sciencedirect.com/science/article/pii/S2211379720321306
Publikováno v:
Bulletin of Materials Science. 43
InxGa1–xN ternary alloys are very promising for a variety of applications. However, high-quality growth of InxGa1–xN alloys, particularly in the intermediate In composition range, is very difficult. This study reports on a systematic analysis of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aadb533d3ea87afe809ed86d4952e54e
https://doi.org/10.1007/s12034-020-02252-x
https://doi.org/10.1007/s12034-020-02252-x
Publikováno v:
2019 4th International Conference on Electrical Information and Communication Technology (EICT).
Of late, two dimensional (2D) gallium nitride (GaN) has appealed a great attention in nanoelectronic and optoelectronic applications due to its outstanding optical, electrical, and thermal properties. In this paper, we have explored the phonon proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab1733cef5356306ddb0cdd044dd01d
https://doi.org/10.1109/eict48899.2019.9068767
https://doi.org/10.1109/eict48899.2019.9068767
Autor:
Sherajul Islam, Jeongwon Park, A. S. M. Jannatul Islam, Akihiro Hashimoto, Ashraful G. Bhuiyan, Naim Ferdous
Publikováno v:
Nanotechnology. 30(44)
Recently, two-dimensional silicon carbide (2D-SiC) has attracted considerable interest due to its exotic electronic and optical properties. Here, we explore the thermal properties of 2D-SiC using reverse non-equilibrium molecular dynamics simulation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94174e7426b670925526f27c3166295d
https://pubmed.ncbi.nlm.nih.gov/31357179
https://pubmed.ncbi.nlm.nih.gov/31357179
Publikováno v:
Bulletin of Materials Science. 42
This paper explores the phonon modes from the Raman spectrum of disordered monolayer epitaxial graphene using the deconvolution technique. The phonon density of states (PDOS) of pristine monolayer graphene has been enumerated and convoluted by a Gaus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01cf2f1081738366f68d5f8df433b667
https://doi.org/10.1007/s12034-019-1856-7
https://doi.org/10.1007/s12034-019-1856-7