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pro vyhledávání: '"Ashish Sura"'
Autor:
Vikas Nehra, Ashish Sura
Publikováno v:
VDAT
The research on intrinsic spin of electrons results a new type of memory device, Spin-transfer-torque magnetic random access memory (STT-MRAM). The property of non-volatility, high endurance, and highly scalable feature size makes STT-MRAM a strong c
Publikováno v:
International Journal of Engineering Applied Sciences and Technology. 6
In this paper, investigate and analysis various techniques for implementing a half adder circuit with the fewest transistors possible. In digital electronics half adder combinational circuit used to add two numbers. It is an arithmetic circuit that p