Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Ashish K Agarwal"'
Autor:
Mohana Bakthavatchalam, Jayanthi Venkataraman, Ramya J Ramana, Mayank Jain, Balwant Singh, Arul K Thanigai, Vaithiswaran Velyoudam, Saravanan Manickam Neethirajan, Manoj K Tiwari, Ashish K Agarwal, Narayana S Kalkura
Publikováno v:
JGH Open, Vol 3, Iss 5, Pp 381-387 (2019)
Background and Aim Regional differences in gallstone (GS) composition are well documented in the Indian subcontinent. The reasons for the same are unknown. Etiopathogenesis of GS remains elusive despite advances in instrumentation. This was an in‐d
Externí odkaz:
https://doaj.org/article/12881bf476a342fa9368439fcfc43b34
Publikováno v:
AIP Advances, Vol 6, Iss 4, Pp 045017-045017-5 (2016)
Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structu
Externí odkaz:
https://doaj.org/article/f7c222f9f5d84fd2bc95a73c9ede87ff
Publikováno v:
Neurology India. 69(5)
Publikováno v:
Materialia. 3:218-229
The characterisation of the damage state contained in materials using synchrotron microtomography with phase contrast is challenging. The uncertainty in quantifying such tomographic datasets containing objects that displays strong phase contrast sens
Autor:
Ashish K. Agarwal, Gautam Kumar Dey, C. K. Gupta, Balwant Singh, Dinesh Srivastava, S. C. Gadkari, P.S. Sarkar, Amar Sinha
Publikováno v:
Materials Science and Engineering: A. 704:292-301
We present the first investigation of cracking by hot compression of any metal matrix composite in zones deforming under tri-axial state of stress using synchrotron microtomography (SRμCT). The task required to reduce the unfavourable manifestations
Publikováno v:
IEEE Electron Device Letters. 36:947-949
An investigation of channel pinchoff close to the drain electrode in a top contact organic thin-film transistor is described using a technique that uses a floating electrode to sense the voltage at the edge of the drain electrode. Upon sweep of the d
Autor:
Ashish K. Agarwal, Baquer Mazhari
Publikováno v:
Organic Electronics. 13:2659-2666
A method of extraction of source and drain resistances in linear mode of operation from a single transistor is described. The proposed method can also be used to measure source resistance over the entire operating range from linear to saturation mode
Publikováno v:
2010 Emobility - Electrical Power Train.
AC voltages in the range of few kV have to be processed before being fed to traction motors. DC traction motors are normally designed for medium voltage and high current (1.2kV–1.5kV and 1200–1500A). Front-End Buck-Rectifiers are a viable solutio