Výsledky vyhledávání - "Ashish Baraskar"

InGaAs channel MOSFET with self‐aligned source/drain MBE regrowth technology

Autor: G. J. Burek, Ashish Baraskar, Brian Thibeault, Yanning Sun, Erdem Arkun, Uttam Singisetti, Mark A. Wistey, Chris Palmstrom, Mark J. W. Rodwell, Edward W. Kiewra, Arthur C. Gossard

Publikováno v: physica status solidi c. 6:1394-1398

InGaAs is a promising alternative channel material to Si for sub-22 nm node technology because of its low electron effective mass (m*) hence high electron velocities. We report a gate-first MOSFET process with self-aligned source/drain formation usin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54ca95dd82aa3e2001789d2740adb1ab
https://doi.org/10.1002/pssc.200881532

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First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications

Autor: Renee T. Mo, Marinus Hopstaken, Sebastian U. Engelmann, Pouya Hashemi, Dae-Gyu Park, Ashish Baraskar, John A. Ott, Ali Khakifirooz, Effendi Leobandung, Kevin K. Chan, Joseph S. Newbury, Balakrishnan Karthik

Publikováno v: 2014 IEEE International Electron Devices Meeting.

For the first time, we report fabrication and characterization of high-performance s-Si 1−x Ge x -OI (x∼0.5) pMOS FinFETs with aggressively scaled dimensions. We demonstrate realization of s-SiGe fins with W FIN =3.3nm and devices with L G =16nm,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88a6c941c5b5e3da5c88ad5bbbd4f853
https://doi.org/10.1109/iedm.2014.7047061

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Co-precipitation synthesis in the presence of surfactant and characterization of nanosized CaRuO3 powders and its application in fired thick film resistors in nanoelectronics

Autor: K. Gurunathan, R Marimuthu, Dinesh Amalnerkar, Ashish Baraskar

Publikováno v: Materials Letters. 59:2555-2562

In this paper, we are presenting the co-precipitation synthesis of CaRuO 3 from the solutions of CaCl 2 ·2H 2 O and RuCl 3 · x H 2 O in the presence of CTAB as the surfactant at pH 9.41 and dried at 100 °C in air and at 250 °C in vacuum. The resu

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https://doi.org/10.1016/j.matlet.2005.03.045

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Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Publikováno v: IEEE Electron Device Letters. 34:723-725

Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ~1.5 × 10-9 Ω· cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f9ccd05218821402c0c44fc7f2bd365c
https://doi.org/10.1109/led.2013.2257664

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Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

Autor: Dae-Gyu Park, John A. Ott, Li A. Yang, Wanki Kim, Ashish Baraskar, Effendi Leobandung, Pouya Hashemi, Ali Khakifirooz, Kevin K. Chan, Amlan Majumdar, Dimitri A. Antoniadis, Sebastian Engelmann, Karthik Balakrishnan

Publikováno v: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

We demonstrate high performance (HP) s-SiGe pMOS finFETs with I on /I eff of ~1.05/0.52mA/μm and ~1.3/0.71mA/μm at I off =100nA/μm at V DD =0.8 and 1V, extremely high intrinsic performance and source injection velocity. Compared to earlier work, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f02055d4ef99fd7a86f1b26cb64dc9d0
https://doi.org/10.1109/vlsit.2014.6894344

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$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Autor: Mark J. W. Rodwell, Mark A. Wistey, Arthur C. Gossard, Ashish Baraskar, Eunji Kim, Yuan Taur, Byungha Shin, Peter M. Asbeck, Yong-Ju Lee, Paul C. McIntyre, B. J. Thibeault, G. J. Burek, Yu Yuan, Uttam Singisetti, Bo Yu, D. Wang

Publikováno v: IEEE Electron Device Letters. 30:1128-1130

We report Al2O3Zln0.53Ga0.47As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate leng

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3076d082a48625f1e5bf32c7071cc288
https://doi.org/10.1109/led.2009.2031304

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Lower limits to specific contact resistivity

Autor: Mark J. W. Rodwell, Ashish Baraskar, Arthur C. Gossard

Publikováno v: 2012 International Conference on Indium Phosphide and Related Materials.

We calculate minimum feasible contact resistivities to n-type and p-type InAs and In 0.53 Ga 0.47 As. Resistivities were calculated for a range of Schottky barrier heights as well as for the case where the transmission probability is unity (Landauer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68a52f877b2133d01673e97f6886fe61
https://doi.org/10.1109/iciprm.2012.6403356

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Autor: Vibhor Jain, Yuan Wu, Evan Lobisser, W. K. Liu, Andrew Snyder, Miguel Urteaga, J. M. Fastenau, Dmitri Loubychev, Mark J. W. Rodwell, Brian Thibeault, Ashish Baraskar, Han-Wei Chiang, Johann C. Rode

Publikováno v: 69th Device Research Conference.

We report 220 nm InP double heterojunction bipolar transistors (DHBTs) demonstrating f τ = 480 GHz and f max = 1.0 THz. Improvements in the emitter and base processes have made it possible to achieve a 1.0 THz f max even at 220 nm wide emitter-base

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac5bdf88020b3d40c14315b071e20636
https://doi.org/10.1109/drc.2011.5994528

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Compound semiconductors on silicon for future generation VLSI

Autor: Joel Barnett, Hill Richard J, Prashant Majhi, Chanro Park, R. Jammy, Ashish Baraskar

Publikováno v: 2010 IEEE International SOI Conference (SOI).

The superior electron mobility and velocity offered by compound semiconductors makes them attractive materials to fill the performance gap expected between strained Si and the product requirements for high performance with low power. The heterointegr

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https://doi.org/10.1109/soi.2010.5641048

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High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology

Autor: W. K. Liu, Yuan Wu, Vibhor Jain, Brian Thibeault, Z. Griffith, Andrew Snyder, Miguel Urteaga, Ashish Baraskar, J. M. Fastenau, Sebastian T. Bartsch, Evan Lobisser, Mark J. W. Rodwell, Dmitri Loubychev

Publikováno v: 68th Device Research Conference.

We report a 110 nm InP/In 0.53 Ga 0.47 As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous f t /f max of 465/660 GHz and operating at power densities in excess of 50 mW/µm2. To our knowledge this is the smallest junct

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https://doi.org/10.1109/drc.2010.5551887

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