Memory Design Using a One-Transistor Gain Cell on SOI.

Autor: Ohsawa, Takashi, Fujita, Katsuyuki, Higashi, Tomoki, Iwata, Yoshihisa, Kajiyama, Takeshi, Asao, Yoshiyuki, Sunouchi, Kazumasa

Publikováno v: IEEE Journal of Solid-State Circuits; Nov2002, Vol. 37 Issue 11, p1510, 13p, 6 Black and White Photographs, 10 Diagrams, 18 Graphs