Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Asad J. Mughal"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:7598-7605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f0190382eece6a2b33fea734f97e570
https://doi.org/10.1007/s10854-022-07907-5
https://doi.org/10.1007/s10854-022-07907-5
Autor:
Daniel Kopp, Kevin Blinn, Haohan Wu, Qinghua Li, Asad J. Mughal, Michael Sender, Bahram Jadidian, Richard E. Riman
Publikováno v:
Vibrational Spectroscopy. 123:103442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a1a8ff47319196770712297a53c25d6
https://doi.org/10.1016/j.vibspec.2022.103442
https://doi.org/10.1016/j.vibspec.2022.103442
Autor:
Norzaini Zainal, Norasmida Ibrahim, Ezzah Azimah Alias, Asad J. Mughal, Steven P. DenBaars, M.E.A. Samsudin, Shuji Nakamura, James S. Speck
Publikováno v:
Optics Express.
This work proposes that roughening on the backside of a GaN substrate prior to InGaN-based LED growth not only simplifies fabrication steps for the LED but also cleans the other side of the substrate that was served as the surface growth for the LED.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6c612e7312e929cff56524aaef4a68f
https://doi.org/10.1364/oe.381356
https://doi.org/10.1364/oe.381356
Autor:
Ian E. Campbell, Suzanne E. Mohney, Alex Molina, Asad J. Mughal, Michael W. Thomas, Timothy N. Walter, Steven P. Dail
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Although silicon (Si) currently dominates the semiconductor industry, its small 1.1 eV band gap limits its maximum operating temperature, which restricts its use in high-temperature, high-power devices. Gallium nitride (GaN) is an attractive semicond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6abb77b88b902658f10128c75fa915
https://doi.org/10.1149/ma2021-01331072mtgabs
https://doi.org/10.1149/ma2021-01331072mtgabs
Autor:
Shuji Nakamura, M.E.A. Samsudin, Asad J. Mughal, James S. Speck, Steven P. DenBaars, Norasmida Ibrahim, Ezzah Azimah Alias, Norzaini Zainal
Publikováno v:
Journal of the Optical Society of America B. 37:1614
This work proposes that roughening on the backside of a GaN substrate prior to InGaN-based LED growth not only simplifies fabrication steps for the LED but also cleans the other side of the substrate that was served as the surface growth for the LED.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d790a8441a1e786e4069df33d3f0706e
https://doi.org/10.1364/josab.381356
https://doi.org/10.1364/josab.381356
Publikováno v:
physica status solidi (a). 217:1900776
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6835184ee486e4bdfde78361cc51490c
https://doi.org/10.1002/pssa.201900776
https://doi.org/10.1002/pssa.201900776
Autor:
Asad J. Mughal, Daniel A. Cohen, Anisa Myzaferi, Shuji Nakamura, Steven P. DenBaars, James S. Speck, Robert M. Farrell
Publikováno v:
Optics express. 26(10)
We report continuous-wave (CW) blue semipolar (202¯1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89ff0d6b644729aad5906ea685f7f244
https://pubmed.ncbi.nlm.nih.gov/29801286
https://pubmed.ncbi.nlm.nih.gov/29801286
Autor:
Sang Ho Oh, Steven P. DenBaars, Asad J. Mughal, James S. Speck, Anisa Myzaferi, Shuji Nakamura
Publikováno v:
Electronics Letters. 52:304-306
The performance of LEDs with Ga-doped ZnO (Ga:ZnO) and Sn-doped In2O3 (ITO) current-spreading layers (CSLs) has been evaluated at high injection current densities. LEDs with electron beam-hydrothermally deposited Ga:ZnO transparent CSLs showed improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3688e560b55a18aa338ed3aa2df96dcb
https://doi.org/10.1049/el.2015.3982
https://doi.org/10.1049/el.2015.3982
Autor:
James S. Speck, Abdullah I. Alhassan, Steven P. DenBaars, Asad J. Mughal, Michel Khoury, Bastien Bonef, Ezzah Azimah, Hongjian Li, Philippe De Mierry, M. E. A. Samsudin, Shuji Nakamura
Publikováno v:
ACS applied materialsinterfaces. 9(41)
We demonstrate efficient semipolar (11-22) 550 nm yellow/green InGaN light-emitting diodes (LEDs) with In0.03Ga0.97N barriers on low defect density (11-22) GaN/patterned sapphire templates. The In0.03Ga0.97N barriers were clearly identified, and no I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dffe8601995f3de0dfe09c4d30163aea
https://pubmed.ncbi.nlm.nih.gov/28960058
https://pubmed.ncbi.nlm.nih.gov/28960058
Autor:
Eugene Zlotnikov, Seung-Beom Cho, Asad J. Mughal, Cekdar Vakifahmetoglu, Bryan VanSaders, Richard E. Riman, Terence Whalen
Publikováno v:
Journal of the American Ceramic Society. 96:3656-3661
Riman, Richard Eric/0000-0002-4289-5768; Vakifahmetoglu, Cekdar/0000-0003-1222-4362 WOS:000326712200047 Acmite (NaFeSi2O6) films were formed on steel coupons via solvothermal reaction of silica, sodium hydroxide, and 1, 4-butanediol in an autoclave u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06b7d7dc985c2681dd37a1464dbd3f3c
https://doi.org/10.1111/jace.12594
https://doi.org/10.1111/jace.12594