Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS

Autor: Curtis, J, Pham, AV, Aryanfar, F

Publikováno v: IET Microwaves, Antennas and Propagation, vol 10, iss 10
Curtis, J; Pham, AV; & Aryanfar, F. (2016). Ka-band doherty power amplifier with 26.9 dBm output power, 42% peak PAE and 32% back-off PAE using GaAs PHEMTS. IET Microwaves, Antennas and Propagation, 10(10), 1101-1105. doi: 10.1049/iet-map.2015.0818. UC Davis: Retrieved from: http://www.escholarship.org/uc/item/5dm702np

© The Institution of Engineering and Technology. The authors present the design and development of a two stage Doherty power amplifier (DPA) in the Ka-band. The amplifier is fabricated in a 0.15-μm gallium arsenide (GaAs) pseudomorphic high electro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::34521a5b4af3277090efe2e53aa0a14d
https://escholarship.org/uc/item/5dm702np

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