Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Arya Lekshmi, Jagath"'
Publikováno v:
The Journal of Engineering (2019)
This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms th
Externí odkaz:
https://doaj.org/article/848f6f444b8e48c68d40e03e91806881
Publikováno v:
IET Circuits, Devices & Systems. 14:1092-1098
One selector-one resistor (1S-1R) configuration is desirable to use in conductive bridge resistive random-access memory (CBRAM) and resistive random-access memory (RRAM) crossbar arrays (CBAs) to reduce sneak path current. In this study, an analytica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a36af1b80825a93a5e62e821631982f1
https://doi.org/10.1049/iet-cds.2019.0480
https://doi.org/10.1049/iet-cds.2019.0480
Publikováno v:
2021 IEEE 19th Student Conference on Research and Development (SCOReD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae0d6df83af03a129012ba996197ca99
https://doi.org/10.1109/scored53546.2021.9652781
https://doi.org/10.1109/scored53546.2021.9652781
Publikováno v:
The Journal of Engineering (2019)
This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4150ead2cf4a58e74b082246434aa2a6
https://doi.org/10.1049/joe.2018.5234
https://doi.org/10.1049/joe.2018.5234
Autor:
T. Nandha Kumar, Arya Lekshmi Jagath
Publikováno v:
2020 IEEE International Conference on Semiconductor Electronics (ICSE).
Two prominent engineering solutions to mitigate sneak path current in Resistive random-access memory (RRAM) based cross bar arrays are a) one selector-one resistor (1S-1R) design and b) complementary resistive switching (CRS) device design. This pape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e842411555a0ffe2283177431b0f474
https://doi.org/10.1109/icse49846.2020.9166874
https://doi.org/10.1109/icse49846.2020.9166874
Publikováno v:
2019 IEEE 9th International Nanoelectronics Conferences (INEC).
This paper proposes an electrical model of Pt/Ta 2 O 5 /TaO x /Pt Resistive Random-Access Memory (RRAM) device encompassing the current conduction mechanism beyond the RESET phase by considering the current conduct through outside of the filament (OC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb14dea765d795560432b39bce91f317
https://doi.org/10.1109/inec.2019.8853845
https://doi.org/10.1109/inec.2019.8853845
Publikováno v:
NVMSA
This paper presents an enhanced analytical model for bipolar resistive switching in Pt/Ta2O5/TaOx/Pt Resistive Random-Access Memory (RRAM) devices. The conduction mechanism of the proposed model has been enhanced compared to the existing similar mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18633be09f08b8e499d141148607b8fb
https://doi.org/10.1109/nvmsa.2018.00014
https://doi.org/10.1109/nvmsa.2018.00014
Publikováno v:
Micro & Nano Letters (Wiley-Blackwell); Nov2020, Vol. 15 Issue 13, p910-914, 5p