Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Arwa A. Abbas"'
Autor:
Erik L. Clarke, A. Jesse Connell, Emmanuelle Six, Nadia A. Kadry, Arwa A. Abbas, Young Hwang, John K. Everett, Casey E. Hofstaedter, Rebecca Marsh, Myriam Armant, Judith Kelsen, Luigi D. Notarangelo, Ronald G. Collman, Salima Hacein-Bey-Abina, Donald B. Kohn, Marina Cavazzana, Alain Fischer, David A. Williams, Sung-Yun Pai, Frederic D. Bushman
Publikováno v:
Genome Medicine, Vol 10, Iss 1, Pp 1-14 (2018)
Abstract Background Mutation of the IL2RG gene results in a form of severe combined immune deficiency (SCID-X1), which has been treated successfully with hematopoietic stem cell gene therapy. SCID-X1 gene therapy results in reconstitution of the prev
Externí odkaz:
https://doaj.org/article/3e61033ef32c4bfb98b5c61714518c31
Autor:
Arwa Saud Abbas
Publikováno v:
APL Energy, Vol 2, Iss 3, Pp 030901-030901-10 (2024)
Based on the demand for an improvement in various corpuscle types of current injection, the objective of this technique is to provide a new concept of carrier generators for optoelectronic pump and injection devices. This investigation is conducted t
Externí odkaz:
https://doaj.org/article/56a46e5bb4c14ea1bcfa75422b4cff2d
Autor:
Arwa Saud Abbas
Publikováno v:
AAPPS Bulletin, Vol 33, Iss 1, Pp 1-12 (2023)
Abstract Carbon-based materials (CM) growth techniques include common growth factors for meta-photonics-heterostructure, holographic displays, and lasers. In this article, a review of basic growth using several sources is presented. The solid and gas
Externí odkaz:
https://doaj.org/article/3c8b67cd4a084526aa756572cff39e1b
Autor:
Magda H Youssef, Hanouf S Alsharif, Aminah A Qartali, Muruj M Bahar, Arwa M Abbas, Fahad S Alshehri, Sulaiman Z Malki
Publikováno v:
Medical Science. 26:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d29a476e3e1cd186291f0e4da18583bd
https://doi.org/10.54905/disssi/v26i129/ms485e2573
https://doi.org/10.54905/disssi/v26i129/ms485e2573
Publikováno v:
Japanese Journal of Applied Physics. 60:050901
We applied a damage-free substrate removal technique using photoelectrochemical etching (PECE) by incorporating sacrificial layer In0.12Ga0.88N single quantum well (SL-SQW) types in semipolar ( 20 2 ¯ 1 ) flip-chip laser diode (FC-LD) structures. Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978de139b977ea49faf363f04b1514ff
https://doi.org/10.35848/1347-4065/abf36d
https://doi.org/10.35848/1347-4065/abf36d
Publikováno v:
Applied Physics Express. 12:036503
An ice bath photo-electrochemical (PEC) undercut etching technique to separate devices from substrates is described. Smoothly etched Si-doped () GaN is produced by etching a 40 nm relaxed sacrificial layer single quantum well. This has potential for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7efc77919a4dfbb3ceb8ae39ab15cc
https://doi.org/10.7567/1882-0786/ab028d
https://doi.org/10.7567/1882-0786/ab028d
Publikováno v:
Advances in nano research. 1:105-109
We report dry thermal development of negative resist polystyrene with low molecular weight. When developed on a hotplate at 350oC for 30 min, polystyrene showed reasonable high contrast and resolution (30 nm half-pitch), but low sensitivity. Resist s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d9561a36983441e711f3389e9edea10
https://doi.org/10.12989/anr.2013.1.2.105
https://doi.org/10.12989/anr.2013.1.2.105
Autor:
James S. Speck, Daniel A. Cohen, Arwa Saud Abbas, Joseph Nedy, A. Pourhashemi, Daniel L. Becerra, Shuji Nakamura, Steven P. DenBaars, Leah Y. Kuritzky, Robert M. Farrell
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
We present advances in the performance and characterization of semipolar (2021) III-nitride laser diodes. These include a high yield facet formation process giving highly vertical and smooth facets (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ed3b30eb3b38a2db6cc1725ff463f3a
https://doi.org/10.1109/iciprm.2016.7528728
https://doi.org/10.1109/iciprm.2016.7528728
Publikováno v:
Microelectronic Engineering. 113:140-142
Polycarbonate is a popular membrane material fabricated by ion track etching method and used for filtration, thus it is a sort of ion beam resist. Here we show that it can also be used as a positive electron beam resist using solvent development. Com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd6a236d827e2a7b8f5d9ff35eb99ad
https://doi.org/10.1016/j.mee.2013.08.006
https://doi.org/10.1016/j.mee.2013.08.006
Autor:
Abdullah Saud Abbas, Sondos Alqarni, Mustafa Yavuz, Babak Baradaran Shokouhi, Arwa Saud Abbas, Bo Cui
Publikováno v:
14th IEEE International Conference on Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::752d28afc82a75bad6eb647dd6185193
https://doi.org/10.1109/nano.2014.6968083
https://doi.org/10.1109/nano.2014.6968083