Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Arvind Raviswaran"'
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Developed a novel multi-layered eSiGe film on FINFET architecture to increase PMOS performance by optimizing within wafer (WiW) uniformity for lateral growth and Boron concentration. The new process reduced growth related defect issues on large die p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef0853597d3c52baab3ffae6774194b
https://doi.org/10.1109/asmc49169.2020.9185252
https://doi.org/10.1109/asmc49169.2020.9185252
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, we present the development of a new 14nm SiGe process that is designed to improve with-in-wafer uniformity to eventually improve Electrical parameters, parametric limited yield and overall average yield. In addition we showed that thro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2aa13a40a0eb3efe3b5e8be0870349
https://doi.org/10.1109/asmc49169.2020.9185259
https://doi.org/10.1109/asmc49169.2020.9185259
Autor:
Michael Wilson, Arvind Raviswaran, Daniel Billingsley, Michael Walker, C. Penley, Shane Phillips
Publikováno v:
Surface and Interface Analysis. 50:90-95
Quantitative analyses of in situ boron-doped SiGe composition on production wafers for 14 and 20-nm logic devices were successfully characterized using advanced, small area Time-of-Flight Secondary Ion Mass Spectrometry analysis methods. The quantifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7906a127acc6fbab4df61093af38887a
https://doi.org/10.1002/sia.6340
https://doi.org/10.1002/sia.6340
Autor:
David G. Cahill, Arvind Raviswaran
Publikováno v:
Physical Review B. 69
We delineate the growth conditions of temperature, substrate vicinality, and hydrogen termination that produce rough and smooth crystal growth of Ge by molecular beam epitaxy. Ge(001) substrates are modified by laser texturing to produce all azimuths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8eb40d558d7ae9d0ed03a319120c753e
https://doi.org/10.1103/physrevb.69.165313
https://doi.org/10.1103/physrevb.69.165313
This paper withdrawn by the authors due to errors in the TEM measurements of the densities and sizes of small islands.
Comment: This paper withdrawn by the authors due to errors in the TEM measurements of the densities and sizes of small islands
Comment: This paper withdrawn by the authors due to errors in the TEM measurements of the densities and sizes of small islands
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cbf3c8b55a8a33b4556871140b53aa7
http://arxiv.org/abs/cond-mat/0008083
http://arxiv.org/abs/cond-mat/0008083
